SCHEMBL14827404

SCHEMBL14827404

CCC(C)c1ccc(C(=O)OC(C)(C)c2ccc(F)cc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 5/20 0.44
▸ LMNA P02545 1/20 0.44
▸ TSHR P16473 3/20 0.43
▸ ADRB2 P07550 2/20 0.40
▸ ADRB1 P08588 2/20 0.40
▸ ADRB3 P13945 2/20 0.40
▸ HPGD P15428 1/20 0.39
▸ KMT2A Q03164 3/20 0.37
▸ MEN1 O00255 2/20 0.37
▸ MAPT P10636 1/20 0.37
▸ CASP3 P42574 1/20 0.37
▸ TRPV1 Q8NER1 1/20 0.37
▸ SENP7 Q9BQF6 1/20 0.37
▸ NPC1 O15118 2/20 0.37
▸ RAB9A P51151 1/20 0.37
▸ ATM Q13315 1/20 0.37
▸ ALOX12 P18054 1/20 0.36
▸ SMN1; SMN2 Q16637 1/20 0.36
▸ CYP2C9 P11712 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13704334 0.88 TSHR (0.43) ALDH1A1TSHRADRB2ADRB1ADRB3
SCHEMBL13704332 0.87 ALDH1A1 (0.43) ALDH1A1LMNATSHRHPGDKMT2A
SCHEMBL13704321 0.87 TSHR (0.43) ALDH1A1TSHRKMT2AMEN1MAPT
SCHEMBL13704323 0.86 ALDH1A1 (0.48) ALDH1A1TSHRMAPTNPC1RAB9A
SCHEMBL24777431 0.86 ALDH1A1 (0.40) ALDH1A1LMNAADRB2ADRB1ADRB3
SCHEMBL25899377 0.84 ALDH1A1 (0.43) ALDH1A1LMNATSHRADRB2ADRB1
SCHEMBL26748914 0.84 ALDH1A1 (0.39) ALDH1A1LMNATSHRADRB1ADRB3
SCHEMBL13704333 0.81 ALDH1A1 (0.42) ALDH1A1LMNATSHRHPGDKMT2A
SCHEMBL13704326 0.81 ALDH1A1 (0.42) ALDH1A1LMNATSHRHPGDKMT2A
SCHEMBL26748910 0.81 KCNN4 (0.36) ALDH1A1TSHRTRPV1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 — — US disclosed
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