⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14247237 | 1.00 | — | — | |
| SCHEMBL19799216 | 0.69 | — | — | |
| SCHEMBL9723211 | 0.67 | — | — | |
| SCHEMBL19799214 | 0.66 | — | — | |
| SCHEMBL8949263 | 0.56 | — | — | |
| SCHEMBL567060 | 0.56 | — | — | |
| SCHEMBL11235615 | 0.56 | — | — | |
| SCHEMBL21773360 | 0.56 | — | — | |
| SCHEMBL1268466 | 0.50 | — | — | |
| SCHEMBL76068 | 0.47 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250357107-A1 | RF PULSING ASSISTED LOW-K MATERIAL DEPOSITION WITH HIGH DENSITY | APPLIED MATERIALS, INC. (US) | 2025-11-20 | — | — | US | claimed |
| WO-2025075893-A1 | METHODS FOR FORMING LOW-Κ DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND ENHANCED ELECTRICAL PROPERTIES | APPLIED MATERIALS, INC. (US) | 2025-04-10 | — | — | WO | claimed |
| US-20250112038-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND ENHANCED ELECTRICAL PROPERTIES | APPLIED MATERIALS, INC. (US) | 2025-04-03 | — | — | US | claimed |
| WO-2025049147-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-03-06 | — | — | WO | claimed |
| US-20250069884-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-27 | — | — | US | claimed |
| US-20250054749-A1 | RF PULSING ASSISTED LOW-K FILM DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | US | claimed |
| WO-2025034650-A1 | RF PULSING ASSISTED LOW-K DEPOSITION WITH HIGH MECHANICAL STRENGTH | APPLIED MATERIALS, INC. (US) | 2025-02-13 | — | — | WO | claimed |
| WO-2024238097-A1 | METHODS FOR FORMING LOW-Κ DIELECTRIC MATERIALS WITH INCREASED ETCH SELECTIVITY | APPLIED MATERIALS, INC. (US) | 2024-11-21 | — | — | WO | claimed |
| US-20240387167-A1 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH INCREASED ETCH SELECTIVITY | APPLIED MATERIALS, INC. (US) | 2024-11-21 | — | — | US | claimed |
| WO-2024226342-A1 | METHODS FOR FORMING LOW-Κ DIELECTRIC MATERIALS | APPLIED MATERIALS, INC. (US) | 2024-10-31 | — | — | WO | claimed |
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | claimed |
| WO-2017093596-A1 | AN ENERGY STORAGE ELECTRODE | UNIVERSITY OF EASTERN FINLAND (FI) | 2017-06-08 | — | — | WO | claimed |
| US-8865850-B2 | Method of selectively forming a reaction product in the presence of a metal silicide | DOW CORNING CORPORATION (US) | 2014-10-21 | — | — | US | claimed |
| EP-2721094-A1 | METHOD OF FORMING POLYSILANES AND POLYCARBOSILANES IN THE PRESENCE OF A METAL SILICIDE | Dow Corning Corporation (US) | 2014-04-23 | — | — | EP | claimed |
| CN-103649177-A | Method of forming polysilanes and polycarbosilanes in the presence of a metal silicide | DOW CORNING | 2014-03-19 | — | — | CN | claimed |
| US-20130334459-A1 | Method of Selectively Forming a Reaction Product in the Presence of a Metal Silicide | DOW CORNING CORPORATION (US) | 2013-12-19 | — | — | US | claimed |
| WO-2012174250-A1 | METHOD OF FORMING POLYSILANES AND POLYCARBOSILANES IN THE PRESENCE OF A METAL SILICIDE | DOW CORNING CORPORATION (US) | 2012-12-20 | — | — | WO | claimed |
| US-7500397-B2 | Activated chemical process for enhancing material properties of dielectric films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2009-03-10 | — | — | US | claimed |
| US-20080199977-A1 | Activated Chemical Process for Enhancing Material Properties of Dielectric Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-08-21 | — | — | US | claimed |
| EP-1959485-A2 | Activated chemical process for enhancing material properties of dielectric films | Air Products and Chemicals, Inc. (US) | 2008-08-20 | — | — | EP | claimed |