SCHEMBL567060

SCHEMBL567060

C[Si]1(C)CCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7598956 0.95
SCHEMBL4962305 0.95
SCHEMBL2973363 0.95
SCHEMBL804991 0.95
Water SCHEMBL27495048 0.91
SCHEMBL9227127 0.86
SCHEMBL820464 0.84
SCHEMBL28239655 0.72
SCHEMBL23146430 0.71 THRB (0.30)
SCHEMBL27473320 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 181 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260049202-A1 SILANE COMPOUND AND COMPOSITIONS CONTAINING SAME SYNTHOMER SDN BHD (MY) 2026-02-19 US claimed
EP-4619470-A1 SILANE COMPOUND AND COMPOSITIONS CONTAINING SAME Synthomer Sdn. Bhd. (MY) 2025-09-24 EP claimed
WO-2024107042-A1 SILANE COMPOUND AND COMPOSITIONS CONTAINING SAME SYNTHOMER SDN BHD (MY) 2024-05-23 WO claimed
US-20220227954-A1 POLYMERIC SURFACE HAVING REDUCED BIOMOLECULE ADHESION TO THERMOPLASTIC ARTICLES OF SUCH SUBSTRATE OAKTREE FUND ADMINISTRATION, LLC 2022-07-21 US claimed
CN-110607103-B Anti-doodling transparent flame-retardant coating and preparation method thereof 苏州群鹰防腐材料有限公司 2021-04-02 CN claimed
CN-110607103-A Anti-doodling transparent flame-retardant coating and preparation method thereof 苏州群鹰防腐材料有限公司 2019-12-24 CN claimed
US-9711455-B2 Method of forming an air gap semiconductor structure with selective cap bilayer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-07-18 US claimed
US-20160133508-A1 AIR GAP STRUCTURE WITH BILAYER SELECTIVE CAP ADEIA SEMICONDUCTOR SOLUTIONS LLC 2016-05-12 US claimed
US-9105642-B2 Interlevel dielectric stack for interconnect structures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-08-11 US claimed
US-20140256154-A1 INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-09-11 US claimed
US-20130260575-A1 SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-03 US claimed
US-20130175697-A1 Interlevel Dielectric Stack for Interconnect Structures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-07-11 US claimed
US-8357608-B2 Multi component dielectric layer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-01-22 US claimed
US-20120032311-A1 MULTI COMPONENT DIELECTRIC LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-02-09 US claimed
WO-2011106218-A2 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-09-01 WO claimed
US-20110206857-A1 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2011-08-25 US claimed
US-20080009141-A1 Methods to form SiCOH or SiCNH dielectrics and structures including the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-01-10 US claimed
US-7189664-B2 Method for producing hydrogenated silicon-oxycarbide films DOW CORNING CORPORATION (US) 2007-03-13 US claimed
US-20060148252-A1 Method for producing hydrogenated silicon-oxycarbide films DOW CORNING CORPORATION 2006-07-06 US claimed
WO-2004077543-A1 METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS DOW CORNING CORPORATION (US) 2004-09-10 WO claimed