SCHEMBL14867116

SCHEMBL14867116

CC1C2CC3OC(=O)C1(C)C3C2

nearest known ligand 0.31

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 2/20 0.31
▸ NPC1 O15118 1/20 0.31
▸ MITF O75030 1/20 0.31
▸ HTT P42858 1/20 0.31
▸ RAB9A P51151 1/20 0.31
▸ KMT2A Q03164 1/20 0.31
▸ PTGS2 P35354 1/20 0.30
▸ POLB P06746 1/20 0.30
▸ ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23566047 1.00 MAPT (0.31) MAPTNPC1MITFHTTRAB9A
SCHEMBL24475291 1.00 MAPT (0.31) MAPTNPC1MITFHTTRAB9A
SCHEMBL15856565 0.81 MAPT (0.34) MAPTNPC1MITFHTTRAB9A
SCHEMBL15181040 0.81 — —
SCHEMBL21567768 0.80 — —
SCHEMBL24791473 0.80 — —
SCHEMBL15275723 0.77 — —
SCHEMBL14878906 0.71 — —
SCHEMBL5423040 0.68 CYP19A1 (0.33) MAPTNPC1RAB9AKMT2A
SCHEMBL13057394 0.66 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 — — US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 — — US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 — — US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 — — US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 — — US disclosed
US-20140178821-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-26 — — US disclosed
US-20140147788-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-29 — — US disclosed
US-20140147793-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-29 — — US disclosed
US-20130302736-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-14 — — US disclosed
US-20130260314-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-03 — — US disclosed
US-20130260312-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-03 — — US disclosed
US-20130260319-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-03 — — US disclosed
US-20130252171-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-26 — — US disclosed
US-20130209941-A1 METHOD OF FORMING PATTERN TOKYO ELECTRON LIMITED (JP) 2013-08-15 — — US disclosed
US-20130095427-A1 RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-18 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 MAPT 4059/4885NPC1 4065/4885MITF 3295/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 MAPT 4792/4885NPC1 3463/4885MITF 4100/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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