Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KCNA3 | P22001 | 2/20 | 0.64 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.57 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.57 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.57 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.57 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.57 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.57 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.57 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.57 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.57 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.57 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.57 |
| ▸ | LTA4H | P09960 | 2/20 | 0.47 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.47 |
| ▸ | DRD2 | P14416 | 1/20 | 0.47 |
| ▸ | DRD4 | P21917 | 1/20 | 0.47 |
| ▸ | DRD3 | P35462 | 1/20 | 0.47 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.47 |
| ▸ | RECQL | P46063 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17476375 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL17476338 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL17476329 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL17476367 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL2685625 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL17476377 | 1.00 | KCNA3 (0.64) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL524338 | 0.92 | KCNA3 (0.62) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL4783831 | 0.89 | HDAC3 (0.54) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL5574693 | 0.89 | HDAC3 (0.54) | KCNA3HDAC1HDAC2HDAC3HDAC4 | |
| SCHEMBL5571071 | 0.84 | TP53 (0.49) | KCNA3HDAC1HDAC2HDAC3HDAC4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101200474-B | Synthesis method of compound for forming self-assembled monolayer, and layer structure for semiconductor component | INFINEON TECHNOLOGIES AG | 2012-05-16 | — | — | CN | claimed |
| EP-1636826-B1 | COMPOUND USED TO FORM A SELF-ASSEMBLED MONOLAYER, LAYER STRUCTURE, SEMICONDUCTOR COMPONENT HAVING A LAYER STRUCTURE, AND METHOD FOR PRODUCING A LAYER STRUCTURE | QIMONDA AG (DE) | 2008-09-10 | — | — | EP | claimed |
| EP-1636294-B1 | SYNTHESIS METHOD FOR A COMPOUND USED TO FORM A SELF-ASSEMBLED MONOLAYER, COMPOUND FOR FORMING A SELF-ASSEMBLED MONOLAYER, AND LAYER STRUCTURE FOR A SEMICONDUCTOR COMPONENT | QIMONDA AG (DE) | 2007-03-28 | — | — | EP | claimed |
| US-20060160272-A1 | Synthesis method for a compound used to form a self-assembled monolayer, compound for forming a self-assembled monolayer, and layer structure for a semiconductor component | QIMONDA AG (DE) | 2006-07-20 | — | — | US | claimed |
| US-20240321690-A1 | INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| EP-4435842-A1 | INTEGRATED CIRCUIT DEVICE | Samsung Electronics Co., Ltd. (KR) | 2024-09-25 | — | — | EP | disclosed |
| CN-118693089-A | Integrated circuit device | 三星电子株式会社 | 2024-09-24 | — | — | CN | disclosed |
| EP-2543086-B1 | SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY PERCOLATING SOURCE LAYER AND METHODS OF FABRICATING THE SAME | UNIV FLORIDA (US) | 2019-06-19 | — | — | EP | disclosed |
| US-20160035903-A1 | THIN-FILM TRANSISTOR | OSAKA UNIVERSITY (JP) | 2016-02-04 | — | — | US | disclosed |
| US-8952361-B2 | Semiconductor devices including an electrically percolating source layer and methods of fabricating the same | UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| US-8618587-B2 | Quantum well graphene structure formed on a dielectric layer having a flat surface | HGST Netherlands B.V. (NL) | 2013-12-31 | — | — | US | disclosed |
| EP-2543086-A2 | SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY PERCOLATING SOURCE LAYER AND METHODS OF FABRICATING THE SAME | University of Florida Research Foundation, Inc. (US) | 2013-01-09 | — | — | EP | disclosed |
| US-20060175603-A1 | Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure | POLARIS INNOVATIONS LIMITED (IE) | 2006-08-10 | — | — | US | disclosed |
| US-20060160272-A1 | Synthesis method for a compound used to form a self-assembled monolayer, compound for forming a self-assembled monolayer, and layer structure for a semiconductor component | QIMONDA AG (DE) | 2006-07-20 | — | — | US | disclosed |
| US-20060160272-A1 | Synthesis method for a compound used to form a self-assembled monolayer, compound for forming a self-assembled monolayer, and layer structure for a semiconductor component | QIMONDA AG (DE) | 2006-07-20 | — | — | US | disclosed |
| WO-2006058858-A2 | METHOD FOR SYNTHESIZING LONG-CHAIN PHOSPHONIC ACID DERIVATIVES AND THIOL DERIVATIVES | QIMONDA AG (DE) | 2006-06-08 | — | — | WO | disclosed |
| EP-1636826-A2 | COMPOUND USED TO FORM A SELF-ASSEMBLED MONOLAYER, LAYER STRUCTURE, SEMICONDUCTOR COMPONENT HAVING A LAYER STRUCTURE, AND METHOD FOR PRODUCING A LAYER STRUCTURE | Infineon Technologies AG (DE) | 2006-03-22 | — | — | EP | disclosed |
| US-20050260803-A1 | Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same | POLARIS INNOVATIONS LIMITED (IE) | 2005-11-24 | — | — | US | disclosed |
| US-20050167660-A1 | Capacitor with a dielectric including a self-organized monolayer of an organic compound | POLARIS INNOVATIONS LIMITED (IE) | 2005-08-04 | — | — | US | disclosed |
| WO-2004114371-A2 | COMPOUND USED TO FORM A SELF-ASSEMBLED MONOLAYER, LAYER STRUCTURE, SEMICONDUCTOR COMPONENT HAVING A LAYER STRUCTURE, AND METHOD FOR PRODUCING A LAYER STRUCTURE | INFINEON TECHNOLOGIES AG (DE) | 2004-12-29 | — | — | WO | disclosed |