SCHEMBL14984098

SCHEMBL14984098

CCC(C)(C)C(=O)OC1CC2CC1CC2C(=O)OCOC

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.30
USP2 O75604 2/20 0.30
ALDH1A1 P00352 2/20 0.30
HMGCR P04035 2/20 0.30
TSHR P16473 2/20 0.30
KDM4E B2RXH2 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
NR1I2 O75469 1/20 0.30
ABCB11 O95342 1/20 0.30
NR3C1 P04150 1/20 0.30
PGR P06401 1/20 0.30
ABCB1 P08183 1/20 0.30
ADORA3 P0DMS8 1/20 0.30
CYP2C8 P10632 1/20 0.30
CHRM1 P11229 1/20 0.30
ADRB3 P13945 1/20 0.30
GABRA1 P14867 1/20 0.30
ADRA2B P18089 1/20 0.30
ADRA2C P18825 1/20 0.30
DRD1 P21728 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14984099 0.88
SCHEMBL14984096 0.84
SCHEMBL14984076 0.84
SCHEMBL14984090 0.83 FKBP1A (0.31)
SCHEMBL16675481 0.82 CYP3A4 (0.33) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL1626304 0.82 GRM2 (0.34) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL14984089 0.81 FKBP1A (0.34) HMGCR
SCHEMBL14984075 0.81 ALDH1A1 (0.36) ALDH1A1MEN1KMT2A
SCHEMBL47458 0.80
SCHEMBL16591122 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9459535-B2 Method of forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-10-04 US disclosed
US-20160195814-A1 PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT FUJIFILM CORPORATION (JP) 2016-07-07 US disclosed
US-9164380-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-10-20 US disclosed
US-9063416-B2 Resist composition, method of forming resist pattern and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-23 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-8883396-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-11-11 US disclosed
US-8785106-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-22 US disclosed
US-20130224658-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-29 US disclosed
US-20130209941-A1 METHOD OF FORMING PATTERN TOKYO ELECTRON LIMITED (JP) 2013-08-15 US disclosed
US-20130189619-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-25 US disclosed
US-20130157197-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130137048-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed