Known targets — ChEMBL curated mechanism
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
The experimentally established mechanism targets of Sulfuric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA5A | P35218 | 2/20 | 0.75 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.75 |
| ▸ | TSHR | P16473 | 3/20 | 0.46 |
| ▸ | CA2 | P00918 | 2/20 | 0.46 |
| ▸ | CA1 | P00915 | 1/20 | 0.46 |
| ▸ | NT5E | P21589 | 1/20 | 0.46 |
| ▸ | CA4 | P22748 | 1/20 | 0.46 |
| ▸ | CA6 | P23280 | 1/20 | 0.46 |
| ▸ | CA7 | P43166 | 1/20 | 0.46 |
| ▸ | CA9 | Q16790 | 1/20 | 0.46 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.46 |
| ▸ | BLM | P54132 | 2/20 | 0.43 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.43 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL10390371 | 1.00 | — | — | |
| Sulfuric Acid SCHEMBL16115852 | 1.00 | — | — | |
| Sulfuric Acid SCHEMBL27867398 | 0.94 | — | — | |
| Sulfuric Acid SCHEMBL1364541 | 0.94 | — | — | |
| Sulfuric Acid SCHEMBL21815661 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 | |
| Sulfuric Acid SCHEMBL6543302 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 | |
| Sulfuric Acid SCHEMBL6368575 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 | |
| Sulfuric Acid SCHEMBL8620979 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 | |
| Sulfuric Acid SCHEMBL8546516 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 | |
| Sulfuric Acid SCHEMBL19625 | 0.94 | CA5A (0.86) | CA5ACA5BTSHRCA2CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2962327-B1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH CO LTD (JP) | 2019-09-11 | — | — | EP | disclosed |
| CN-105190854-B | Coating liquid for forming metal oxide film, field effect transistor, and method for manufacturing field effect transistor | 株式会社理光 | 2018-01-30 | — | — | CN | disclosed |
| CN-107403716-A | Form coating fluid, metal-oxide film, field-effect transistor and the method for manufacturing field-effect transistor of metal-oxide film | 株式会社理光 | 2017-11-28 | — | — | CN | disclosed |
| US-9748097-B2 | Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor | RICOH COMPANY, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| EP-2786405-B1 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR | RICOH CO LTD (JP) | 2017-03-29 | — | — | EP | disclosed |
| US-9418842-B2 | Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor | RICOH COMPANY, LTD. (JP) | 2016-08-16 | — | — | US | disclosed |
| US-20160042947-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2016-02-11 | — | — | US | disclosed |
| EP-2962327-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | Ricoh Company, Ltd. (JP) | 2016-01-06 | — | — | EP | disclosed |
| CN-105190854-A | Coating liquid for forming metal oxide film, field effect transistor, and method for manufacturing field effect transistor | RICOH CO LTD | 2015-12-23 | — | — | CN | disclosed |
| US-20140299877-A1 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2014-10-09 | — | — | US | disclosed |
| EP-2786405-A1 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR | Ricoh Company, Ltd. (JP) | 2014-10-08 | — | — | EP | disclosed |
| WO-2014157733-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2014-10-02 | — | — | WO | disclosed |
| CN-104081510-A | Coating liquid for forming metal oxide thin film, field effect transistor, and method for manufacturing field effect transistor | RICOH CO LTD | 2014-10-01 | — | — | CN | disclosed |
| WO-2013081167-A1 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2013-06-06 | — | — | WO | disclosed |