SCHEMBL1506243

SCHEMBL1506243

C=COCCOc1cc(OCCOC=C)cc(OCCOC=C)c1

nearest known ligand 0.33

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
▸ THRB P10828 1/20 0.33
▸ KDM4E B2RXH2 1/20 0.30
▸ MAPK1 P28482 1/20 0.30
▸ TDP1 Q9NUW8 1/20 0.30
▸ MEN1 O00255 1/20 0.30
▸ LMNA P02545 1/20 0.30
▸ KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15282329 0.89 MAPK1 (0.43) THRBKDM4EMAPK1TDP1MEN1
SCHEMBL9808175 0.89 TP53 (0.38) KDM4ETDP1MEN1KMT2A
SCHEMBL419321 0.87 MAPK1 (0.44) THRBKDM4EMAPK1TDP1MEN1
SCHEMBL419937 0.85 THRB (0.41) THRBKDM4EMAPK1TDP1
SCHEMBL11787432 0.85 TP53 (0.41) KDM4EMAPK1TDP1MEN1KMT2A
SCHEMBL3426128 0.83 MAPK1 (0.43) THRBKDM4EMAPK1TDP1MEN1
SCHEMBL26322259 0.82 PRSS1 (0.42) THRBKDM4EMAPK1TDP1MEN1
SCHEMBL26322279 0.80 THRB (0.30) THRB
SCHEMBL1506385 0.79 CYP3A4 (0.41) THRB
SCHEMBL1506206 0.79 LTA4H (0.44) THRBMAPK1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116209699-A Polyacetal-based releasable compositions 德路工业胶粘剂有限两合公司 2023-06-02 — — CN claimed
EP-2524947-B1 ORGANIC PASSIVATION LAYER COMPOSITION, TRANSISTOR AND/OR ELECTRONIC DEVICE INCLUDING ORGANIC PASSIVATION LAYER FABRICATED THEREFROM SAMSUNG ELECTRONICS CO LTD (KR) 2017-07-12 — — EP claimed
US-9023980-B2 Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-05-05 — — US claimed
EP-2575188-B1 Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same SAMSUNG ELECTRONICS CO LTD (KR) 2014-05-21 — — EP claimed
EP-2575188-A2 Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same Samsung Electronics Co., Ltd (KR) 2013-04-03 — — EP claimed
US-20120291857-A1 Organic Passivation Layer Composition, Transistor And/Or Electronic Device Including Organic Passivation Layer Fabricated Therefrom SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-11-22 — — US claimed
EP-2524947-A1 Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom Samsung Electronics Co., Ltd. (KR) 2012-11-21 — — EP claimed
US-8003729-B2 comprising crosslinkable polyvinylalcohol, polyvinylphenol, polyhydroxyphenylmaleimide, aromatic polyimides and crosslinking agent; resist to heat and chemical; organic thin film transistor SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-23 — — US claimed
EP-1995799-A2 Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same Samsung Electronics Co., Ltd. (KR) 2008-11-26 — — EP claimed
US-20080283829-A1 Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same SAMSUNG ELECTRONICS CO., LTD. 2008-11-20 — — US claimed
US-6395450-B1 MIXTURE OF ACID GENERATOR, BINDER AND SOLVENT SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-05-28 — — US claimed
US-20230350302-A1 POLYMER CROSSLINK DE-CROSSLINK PROCESSES FOR RESIST PATTERNING TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-02 — — US disclosed
US-20230296980-A1 RESIST MATERIAL AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
EP-0131824-A2 Photopolymerizable composition FUJI PHOTO FILM CO., LTD. (JP) 1985-01-23 — — EP disclosed
US-4304838-A FILMS FOR PEELABLE DEVELOPMENT FUJI PHOTO FILM CO., LTD. (JP) 1981-12-08 — — US disclosed
US-4175964-A SUCCESSIVE SURFACE TREATMENT WITH AQUEOUS SOLUTIONS OF PHOSPHORIC ACID AND SILICIC ACID OR ITS SALTS FUJI PHOTO FILM CO., LTD. (JP) 1979-11-27 — — US disclosed
US-4058443-A PHOTOPOLYMERIZATION, BINDER, CHLORINATED POLYOLEFIN FUJI PHOTO FILM CO., LTD. (JA) 1977-11-15 — — US disclosed
US-4050936-A Image forming process with photopolymer layers between a support and a substrate FUJI PHOTO FILM CO., LTD. (JA) 1977-09-27 — — US disclosed
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