SCHEMBL1585783

SCHEMBL1585783

C=CCN(CC=C)[Si](CC=C)(CC=C)N(CC=C)CC=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2162666 0.77
SCHEMBL3435783 0.77
SCHEMBL3119944 0.74 TSHR (0.30)
SCHEMBL15170598 0.74 ALDH1A1 (0.32)
SCHEMBL3478236 0.74 ALDH1A1 (0.32)
SCHEMBL2808257 0.72 ALDH1A1 (0.30)
SCHEMBL2808254 0.72 ALDH1A1 (0.30)
SCHEMBL250680 0.67
SCHEMBL3803862 0.67
SCHEMBL7645091 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2491579-B1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS HARVARD COLLEGE (US) 2019-03-13 EP claimed
US-8569165-B2 Self-aligned barrier and capping layers for interconnects PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2013-10-29 US claimed
EP-2491579-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS President and Fellows of Harvard College (US) 2012-08-29 EP claimed
US-20110163062-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2011-07-07 US claimed
WO-2011050073-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2011-04-28 WO claimed
CN-114334605-A Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus, and storage medium 株式会社国际电气 2022-04-12 CN disclosed
EP-2491579-B1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS HARVARD COLLEGE (US) 2019-03-13 EP disclosed
US-20170012001-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2017-01-12 US disclosed
US-9390971-B2 Self-aligned barrier and capping layers for interconnects PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2016-07-12 US disclosed
US-20150325474-A1 Self-Aligned Barrier and Capping Layers For Interconnects PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2015-11-12 US disclosed
US-9112005-B2 Self-aligned barrier and capping layers for interconnects PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2015-08-18 US disclosed
US-20140045331-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2014-02-13 US disclosed
US-8569165-B2 Self-aligned barrier and capping layers for interconnects PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 2013-10-29 US disclosed
US-20110163062-A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2011-07-07 US disclosed
US-5512422-A Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1996-04-30 US disclosed
US-5380889-A Method of forming resist pattern and organic silane compound for forming anti-relflection film for use in such method MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1995-01-10 US disclosed
EP-0509271-A2 Siloxi-Polytetrahydrofuran BASF Aktiengesellschaft (DE) 1992-10-21 EP disclosed