SCHEMBL15935664

SCHEMBL15935664

CCCCOCCSC(C(=O)c1ccc(OC)cc1)C(C)(C)C

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ HTT P42858 2/20 0.41
▸ SMN1; SMN2 Q16637 2/20 0.41
▸ SLC2A1 P11166 2/20 0.41
▸ MEN1 O00255 1/20 0.41
▸ CYP2D6 P10635 1/20 0.41
▸ KMT2A Q03164 1/20 0.41
▸ HPGD P15428 1/20 0.41
▸ ALDH1A1 P00352 3/20 0.41
▸ LMNA P02545 2/20 0.41
▸ HDAC3 O15379 2/20 0.40
▸ HDAC1 Q13547 2/20 0.40
▸ HDAC2 Q92769 2/20 0.40
▸ GAA P10253 1/20 0.40
▸ MAPT P10636 1/20 0.40
▸ SLC6A2 P23975 1/20 0.40
▸ SLC6A4 P31645 1/20 0.40
▸ SLC6A3 Q01959 1/20 0.40
▸ RARB P10826 1/20 0.40
▸ CASR P41180 1/20 0.39
▸ TAS1R3 Q7RTX0 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15935680 0.90 SMN1; SMN2 (0.46) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL17126973 0.87 SMN1; SMN2 (0.43) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL17126974 0.86 PARP10 (0.46) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL17127027 0.85 PARP10 (0.44) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL17777239 0.85 SLC2A1 (0.48) SMN1; SMN2SLC2A1MEN1KMT2AHPGD
SCHEMBL17126862 0.80 AKR1C3 (0.39) HTTSMN1; SMN2SLC2A1HPGDALDH1A1
SCHEMBL17126983 0.78 SMN1; SMN2 (0.36) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL17126975 0.78 TTR (0.39) HTTSMN1; SMN2MEN1KMT2AHPGD
SCHEMBL17127363 0.78 PARP10 (0.46) HTTSMN1; SMN2SLC2A1MEN1CYP2D6
SCHEMBL23196538 0.78 HTT (0.46) HTTSMN1; SMN2SLC2A1MEN1CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020202944-A1 ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN FILM, PATTERN-FORMING METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD 富士フイルム株式会社 2020-10-08 — — WO disclosed
WO-2014119698-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-07 — — WO disclosed
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