SCHEMBL15978727

SCHEMBL15978727

C1CC2CC1C1CC3OC3CC21

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14949900 1.00 HSD11B1 (0.31) HSD11B1
SCHEMBL16605700 0.81
SCHEMBL25878992 0.81
SCHEMBL26073691 0.78
SCHEMBL9537843 0.75
SCHEMBL13398885 0.73 KDM4E (0.35)
SCHEMBL14114656 0.73
SCHEMBL10335733 0.73
SCHEMBL13818194 0.73 KDM4E (0.31)
SCHEMBL25878991 0.73 KDM4E (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3450499-B1 COMPOSITION FOR CURABLE RESIN, AND CURED PRODUCT THEREOF ENEOS CORP (JP) 2023-11-01 EP disclosed
US-9905768-B2 Semiconductor device and insulating layer-forming composition FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-20170054076-A1 SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION FUJIFILM CORPORATION (JP) 2017-02-23 US disclosed
US-20170054076-A1 SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION FUJIFILM CORPORATION (JP) 2017-02-23 US disclosed
US-20170005266-A1 SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION FUJIFILM CORPORATION (JP) 2017-01-05 US disclosed
US-20170005266-A1 SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION FUJIFILM CORPORATION (JP) 2017-01-05 US disclosed
US-9400430-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-07-26 US disclosed
US-9400430-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-07-26 US disclosed
US-20140242502-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-28 US disclosed
US-20140242502-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-28 US disclosed