Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.31 |
| ▸ | SRC | P12931 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | GMNN | O75496 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6546468 | 0.78 | ALDH1A1 (0.34) | ALDH1A1KMT2ASRC | |
| SCHEMBL8604697 | 0.72 | CA1 (0.31) | TDP1 | |
| SCHEMBL2007360 | 0.72 | — | — | |
| SCHEMBL310073 | 0.72 | — | — | |
| SCHEMBL28757454 | 0.71 | ALDH1A1 (0.36) | ALDH1A1KMT2ALMNAPOLBPMP22 | |
| SCHEMBL3398714 | 0.70 | SRC (0.54) | ALDH1A1KMT2ASRCKDM4EGMNN | |
| SCHEMBL248500 | 0.70 | SRC (0.54) | ALDH1A1KMT2ASRCKDM4EGMNN | |
| SCHEMBL3390806 | 0.70 | SRC (0.54) | ALDH1A1KMT2ASRCKDM4EGMNN | |
| SCHEMBL8145774 | 0.68 | SRC (0.53) | ALDH1A1SRCLMNAMAPTHPGD | |
| Fluoride SCHEMBL9120872 | 0.68 | SRC (0.52) | ALDH1A1KMT2ASRCKDM4EGMNN |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106146837-B | Poly- 3 ethylsulfonic acid root pyrroles/pyrroles's intercalated hydrotalcite composite material and its preparation technology | 淄博职业学院 | 2018-02-27 | — | — | CN | claimed |
| CN-106146837-A | Poly-3 ethylsulfonic acid root pyrroles/pyrroles's intercalated hydrotalcite composite material and preparation technology thereof | 淄博职业学院 | 2016-11-23 | — | — | CN | claimed |
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| CN-106146837-B | Poly- 3 ethylsulfonic acid root pyrroles/pyrroles's intercalated hydrotalcite composite material and its preparation technology | 淄博职业学院 | 2018-02-27 | — | — | CN | disclosed |
| CN-106146837-A | Poly-3 ethylsulfonic acid root pyrroles/pyrroles's intercalated hydrotalcite composite material and preparation technology thereof | 淄博职业学院 | 2016-11-23 | — | — | CN | disclosed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | disclosed |
| EP-0459255-B1 | Method for suppression of electrification | HITACHI LTD (JP) | 1998-03-18 | — | — | EP | disclosed |
| US-5589270-A | Processed substrate obtained by a process for effecting suppression of electrification | HITACHI, LTD. (JP) | 1996-12-31 | — | — | US | disclosed |
| US-5437893-A | Method for suppression of electrification | HITACHI, LTD (JP) | 1995-08-01 | — | — | US | disclosed |
| US-5256454-A | Method for suppression of electrification | HITACHI, LTD. (JP) | 1993-10-26 | — | — | US | disclosed |
| EP-0459255-A2 | Method for suppression of electrification | HITACHI, LTD. (JP) | 1991-12-04 | — | — | EP | disclosed |