SCHEMBL1607285

SCHEMBL1607285

O=S(=O)(OCc1cccc2ccccc12)OCc1cccc2ccccc12

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.50
NQO2 P16083 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
CYP1A2 P05177 2/20 0.47
CYP2C19 P33261 2/20 0.47
CYP2C9 P11712 1/20 0.47
MEN1 O00255 2/20 0.46
KMT2A Q03164 2/20 0.46
NPC1 O15118 1/20 0.46
RAB9A P51151 1/20 0.46
PARP10 Q53GL7 1/20 0.46
ACP3 P15309 1/20 0.46
SLC1A3 P43003 1/20 0.45
SLC1A2 P43004 1/20 0.45
SLC1A1 P43005 1/20 0.45
CYP2D6 P10635 1/20 0.44
CNR1 P21554 1/20 0.44
CNR2 P34972 1/20 0.44
ATM Q13315 1/20 0.44
FFAR1 O14842 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30363574 0.85 MEN1 (0.51) CA2NQO2TDP1CYP1A2CYP2C19
SCHEMBL9861136 0.82 TDP1 (0.46) CA2NQO2TDP1CYP1A2CYP2C19
SCHEMBL9745651 0.81 TDP1 (0.45) CA2NQO2TDP1CYP1A2CYP2C19
SCHEMBL11018638 0.81 CA2 (0.44) CA2NQO2TDP1CYP1A2CYP2C19
Sulfuric Acid SCHEMBL28586052 0.79 TDP1 (0.50) CA2NQO2TDP1CYP1A2CYP2C19
SCHEMBL24361301 0.79 NQO2 (0.54) CA2NQO2CYP1A2CYP2C19MEN1
SCHEMBL4850585 0.77 CYP1A2 (0.56) TDP1CYP1A2CYP2C19CYP2C9MEN1
SCHEMBL31012122 0.77 CYP1A2 (0.56) TDP1CYP1A2CYP2C19CYP2C9MEN1
SCHEMBL548862 0.74 NQO2 (0.46) CA2NQO2TDP1CYP1A2CYP2C19
SCHEMBL8726087 0.74 CYP1A2 (0.52) TDP1CYP1A2CYP2C19CYP2C9MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US claimed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US claimed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US disclosed