Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.41 |
| ▸ | SLC2A1 | P11166 | 2/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | MPL | P40238 | 1/20 | 0.39 |
| ▸ | USP2 | O75604 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14991138 | 0.89 | HSD17B10 (0.44) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL1803007 | 0.88 | HSD17B10 (0.42) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL1803005 | 0.88 | HSD17B10 (0.42) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL1804050 | 0.86 | HSD17B10 (0.41) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL1804056 | 0.86 | ADRA1A (0.44) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL25752894 | 0.86 | SLC2A1 (0.44) | HSD17B10SLC2A1L3MBTL1MAPTUSP2 | |
| SCHEMBL1808452 | 0.85 | HSD17B10 (0.41) | HSD17B10GAASLC2A1CA1CA2 | |
| SCHEMBL1808453 | 0.85 | CYP2D6 (0.47) | HSD17B10GAASLC2A1L3MBTL1ALDH1A1 | |
| SCHEMBL1805383 | 0.83 | TAAR1 (0.57) | GAAMAPT | |
| SCHEMBL1805381 | 0.83 | HSD17B10 (0.40) | HSD17B10GAASLC2A1CA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |