SCHEMBL1607370

SCHEMBL1607370

CCCCOCCc1cc(S(=O)(=O)O)ccc1C

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.43
TSHR P16473 4/20 0.39
ALDH1A1 P00352 3/20 0.39
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA7 P43166 1/20 0.38
CA9 Q16790 1/20 0.38
RARB P10826 2/20 0.37
PTGS2 P35354 2/20 0.37
PTGS1 P23219 1/20 0.37
LMNA P02545 1/20 0.36
POLB P06746 1/20 0.36
HPGD P15428 2/20 0.36
NPC1 O15118 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
RAB9A P51151 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9010034 0.91 PTGS2 (0.38) S1PR3ALDH1A1PTGS2PTGS1LMNA
SCHEMBL10430518 0.89 S1PR3 (0.50) S1PR3TSHRALDH1A1CA2LMNA
SCHEMBL900004 0.87 GAA (0.38) S1PR3TSHRALDH1A1PTGS2PTGS1
SCHEMBL8664631 0.86 AOC2 (0.36) S1PR3ALDH1A1CA12CA1CA2
SCHEMBL5861877 0.86 AOC2 (0.36) S1PR3ALDH1A1CA12CA1CA2
SCHEMBL29006523 0.86 PTGS2 (0.45) S1PR3PTGS2PTGS1KDM4E
SCHEMBL4620923 0.85 S1PR3 (0.43) S1PR3ALDH1A1CA12CA1CA2
SCHEMBL8927990 0.84 GAA (0.42) S1PR3TSHRALDH1A1LMNAHPGD
SCHEMBL10652394 0.84 S1PR3 (0.45) S1PR3TSHRALDH1A1CA12CA1
Ammonia Solution, Strong SCHEMBL28286823 0.84 S1PR3 (0.42) S1PR3ALDH1A1CA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-5567783-A FLEXIBLE, AMORPHOUS POLYMER; SOLID ELECTROLYTES THE PENN STATE RESEARCH FOUNDATION (US) 1996-10-22 US disclosed
WO-1996027630-A1 IONICALLY CONDUCTIVE POLYPHOSPHAZENES WITH ETHER SIDEGROUPS THE PENN STATE RESEARCH FOUNDATION (US) 1996-09-12 WO disclosed