SCHEMBL16074672

SCHEMBL16074672

CCCC(O)C(C)(O)CO

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.36
LMNA P02545 1/20 0.34
CHRM1 P11229 1/20 0.33
AKR1A1 P14550 1/20 0.33
CHRM3 P20309 1/20 0.33
HTR2A P28223 1/20 0.33
HTR2C P28335 1/20 0.33
ADRA1A P35348 1/20 0.33
HRH1 P35367 1/20 0.33
DRD3 P35462 1/20 0.33
SLC6A3 Q01959 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC2 Q92769 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30940110 0.86 ALDH1A1 (0.43) TSHRLMNATDP1ALDH1A1
SCHEMBL16078678 0.82 LMNA (0.45) LMNA
SCHEMBL16078644 0.82 LMNA (0.45) LMNA
SCHEMBL16078652 0.82 LMNA (0.45) LMNA
SCHEMBL16078660 0.82 LMNA (0.45) LMNA
SCHEMBL9367618 0.82 LMNA (0.45) LMNA
SCHEMBL16078687 0.82 LMNA (0.45) LMNA
SCHEMBL28891830 0.82 DPP4 (0.36) TSHR
SCHEMBL581624 0.82 TSHR (0.38) TSHRLMNA
SCHEMBL634000 0.82 TSHR (0.38) TSHRLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120019333-A Flushing liquid composition for extreme ultraviolet lithography and pattern forming method using same YC化学制品株式会社 2025-05-16 CN claimed
US-9188866-B2 Composition for forming titanium-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-17 US disclosed
US-9176382-B2 Composition for forming titanium-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-03 US disclosed
US-9176382-B2 Composition for forming titanium-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-03 US disclosed
US-20140273447-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed
US-20140273447-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed
US-20140273448-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed
US-20140273448-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed