SCHEMBL1607820

SCHEMBL1607820

O=S(=O)(OCCCl)OCCCl

nearest known ligand 0.42

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
ALDH1A1 P00352 3/20 0.36
TP53 P04637 1/20 0.33
KDM4E B2RXH2 1/20 0.30
USP2 O75604 1/20 0.30
LMNA P02545 1/20 0.30
MMP9 P14780 1/20 0.30
ALOX15 P16050 1/20 0.30
TSHR P16473 1/20 0.30
CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9456576 0.88
SCHEMBL31229762 0.87 CA1 (0.48) CA1CA2TSHRCA9
SCHEMBL7920518 0.87 CA1 (0.40) CA1CA2
SCHEMBL3342897 0.81 CA1 (0.64) CA1CA2ALDH1A1KDM4EUSP2
SCHEMBL7575729 0.78
SCHEMBL11155659 0.75
SCHEMBL2734239 0.75
SCHEMBL10629834 0.75
SCHEMBL11883897 0.75
SCHEMBL8666163 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US claimed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US claimed
JP-3005462-A None JP disclosed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US disclosed
EP-0259849-B1 PROCESS FOR THE PREPARATION OF C.I. VAT BLUE 16 BASF Aktiengesellschaft (DE) 1991-10-16 EP disclosed
JP-H035462-A PREPARATION OF 1-(2-CHLOROETHYL)-2-METHYL-5-NITROIMIDAZOLE RHONE POULENC SANTE 1991-01-11 JP disclosed
EP-0399900-A1 Process for the preparation of 1-(2-chloro-ethyl)-2-methyl-5-nitro imidazol RHONE-POULENC SANTE (FR) 1990-11-28 EP disclosed
US-4824608-A ALKYLATING 16,17-DIHYDROXYVIOLANTHRENE-5,10-DIONE IN TERTIARY ALIPHATIC OR CYCLOALIPHATIC AMINE AS SOLVENT BASF AKTIENGESELLSCHAFT (DE) 1989-04-25 US disclosed
EP-0259849-A2 Process for the preparation of C.I. vat blue 16 BASF Aktiengesellschaft (DE) 1988-03-16 EP disclosed
US-4421516-A Process for preparing discharge resist prints on hydrophobic textile materials CASSELLA AKTIENGESELLSCHAFT (DE) 1983-12-20 US disclosed