SCHEMBL1608010

SCHEMBL1608010

CCOC(C)OC(CC)O[SiH3]

nearest known ligand 0.48

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.48
THRB P10828 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28453249 0.83
SCHEMBL2114055 0.81
SCHEMBL1608646 0.79
SCHEMBL1608070 0.78 DNM1 (0.36)
SCHEMBL22654236 0.78 MEN1 (0.32)
SCHEMBL1608795 0.78
SCHEMBL28482909 0.76 LMNA (0.52) LMNATHRB
SCHEMBL22661038 0.75
SCHEMBL22654286 0.75
SCHEMBL10952973 0.75 DNM1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 91 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-20220220338-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-14 US disclosed
US-20220213348-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-07 US disclosed
US-11377522-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica-based coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-05 US disclosed
CN-108389512-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-04-15 CN disclosed
US-20100119939-A1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
EP-2131423-A1 NEGATIVE ELECTRODE BASE MEMBER Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-12-09 EP disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-20080318165-A1 Composition For Forming Antireflective Film And Wiring Forming Method Using Same TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-25 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
US-20060141693-A1 Semiconductor multilayer interconnection forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed