SCHEMBL1608048

SCHEMBL1608048

CCCCO[Si](OCCC)(OCCCC)OCCCC

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.41
ADRB1 P08588 1/20 0.41
ADRB3 P13945 1/20 0.41
TSHR P16473 5/20 0.36
CYP3A4 P08684 3/20 0.36
ALDH1A1 P00352 1/20 0.35
HPGD P15428 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
LMNA P02545 1/20 0.33
ATM Q13315 1/20 0.32
THRB P10828 1/20 0.32
CYP2D6 P10635 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17644804 1.00 ADRB2 (0.41) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL4328341 1.00 ADRB2 (0.41) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL17644809 1.00 ADRB2 (0.41) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL49555 0.94 ADRB2 (0.45) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL1609590 0.92 ADRB2 (0.36) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL1608585 0.92 ADRB2 (0.36) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL1608586 0.92 ADRB2 (0.36) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL1608058 0.92 THRB (0.37) TSHRCA1CA2THRB
SCHEMBL17644803 0.92 THRB (0.37) TSHRCA1CA2THRB
SCHEMBL1609517 0.92 THRB (0.37) TSHRCA1CA2THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12473405-B2 Polyorganosiloxane, polyorganosiloxane composition, cured product, polyorganosiloxane-containing electrolytic solution for electrolytic capacitor, and electrolytic capacitor using same MITSUBISHI CHEMICAL CORPORATION (JP) 2025-11-18 US disclosed
WO-2025053280-A1 OPTICAL WAVEGUIDE AND OPTICAL MEMBER HAVING OPTICAL WAVEGUIDE 三菱ケミカル株式会社 2025-03-13 WO disclosed
WO-2025053278-A1 ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD 三菱ケミカル株式会社 2025-03-13 WO disclosed
WO-2025053279-A1 ORGANOPOLYSILOXANE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION, CURED PRODUCT THEREOF, ORGANOPOLYSILOXANE FOR NEAR-INFRARED OPTICAL WAVEGUIDE, ORGANOPOLYSILOXANE-CONTAINING RESIN COMPOSITION FOR NEAR-INFRARED OPTICAL WAVEGUIDE, CURED PRODUCT FOR NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL WAVEGUIDE, NEAR-INFRARED OPTICAL TRANSMISSION MEMBER, AND NEAR-INFRARED OPTICAL WAVEGUIDE PRODUCTION METHOD 三菱ケミカル株式会社 2025-03-13 WO disclosed
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
US-20230250237-A1 POLYORGANOSILOXANE, POLYORGANOSILOXANE COMPOSITION, CURED PRODUCT, POLYORGANOSILOXANE-CONTAINING ELECTROLYTIC SOLUTION FOR ELECTROLYTIC CAPACITOR, AND ELECTROLYTIC CAPACITOR USING SAME MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-10 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-20060141693-A1 Semiconductor multilayer interconnection forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed