SCHEMBL1609080

SCHEMBL1609080

CCOc1ccccc1O[SiH3]

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.56
L3MBTL1 Q9Y468 8/20 0.53
MAPT P10636 3/20 0.53
NPSR1 Q6W5P4 1/20 0.53
GLA P06280 1/20 0.53
TDP1 Q9NUW8 2/20 0.50
CYP1A2 P05177 1/20 0.50
CYP2D6 P10635 1/20 0.50
CYP2C19 P33261 1/20 0.50
RAB9A P51151 1/20 0.47
ATM Q13315 1/20 0.47
ALOX15 P16050 1/20 0.46
HTR1A P08908 1/20 0.44
ADRA1D P25100 1/20 0.44
ADRA1A P35348 1/20 0.44
ADRA1B P35368 1/20 0.44
KDM4E B2RXH2 1/20 0.43
HPGD P15428 1/20 0.43
GAA P10253 1/20 0.43
HCRTR1 O43613 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
1,2-Diethoxybenzene SCHEMBL29428929 0.87 ALDH1A1 (0.68) ALDH1A1L3MBTL1MAPTNPSR1GLA
1,2-Diethoxybenzene SCHEMBL578986 0.87 ALDH1A1 (0.68) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL28581516 0.82 CYP1A2 (0.47) ALDH1A1L3MBTL1MAPTNPSR1TDP1
SCHEMBL28728644 0.82 ALDH1A1 (0.52) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL28589559 0.80 CYP1A2 (0.60) L3MBTL1MAPTNPSR1TDP1CYP1A2
SCHEMBL28626660 0.80 ALDH1A1 (0.45) ALDH1A1L3MBTL1MAPTNPSR1GLA
1,2-Diethoxybenzene SCHEMBL8912901 0.80 ALDH1A1 (0.60) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL10998289 0.80 ALDH1A1 (0.60) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL4920959 0.80 L3MBTL1 (0.76) ALDH1A1L3MBTL1MAPTNPSR1GLA
SCHEMBL3975501 0.79 CYP1A2 (0.53) ALDH1A1L3MBTL1MAPTNPSR1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-20220220338-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-14 US disclosed
US-20220213348-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-07 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-4831091-A USING A COORDINATION CATALYST CONTAINING A SILANETRIOL OR -DIOL AS WELL AS AN AROMATIC ESTSER; ODORLESS; STEREOSPECIFIC; PARTICLE SIZES CHISSO CORPORATION (JP) 1989-05-16 US disclosed