Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRB2 | P07550 | 1/20 | 0.38 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.38 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | ATM | Q13315 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2946093 | 0.92 | CA1 (0.33) | TSHRCA1CA2 | |
| SCHEMBL1067718 | 0.83 | — | — | |
| SCHEMBL2778107 | 0.83 | ADRB2 (0.45) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| Fluoride SCHEMBL30634504 | 0.80 | ADRB2 (0.43) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL11657019 | 0.77 | ADRB2 (0.36) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL30712210 | 0.76 | ADRB2 (0.39) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL30712214 | 0.76 | ADRB2 (0.39) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL30712212 | 0.76 | ADRB2 (0.39) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL16909992 | 0.75 | ADRB2 (0.35) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL8357514 | 0.75 | ADRB2 (0.35) | ADRB2ADRB1ADRB3TSHRCYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2154710-B1 | Substrate joining method and 3-D semiconductor device | SHINETSU CHEMICAL CO (JP) | 2016-11-16 | — | — | EP | disclosed |
| US-8257528-B2 | Substrate joining method and 3-D semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-04 | — | — | US | disclosed |
| US-7923522-B2 | excellent in stability of particle size and to be used for electronic materials; adding a hydrolyzable silane compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-20100283133-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | HAMADA YOSHITAKA | 2010-11-11 | — | — | US | disclosed |
| US-20100233482-A1 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | HAMADA YOSHITAKA | 2010-09-16 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20100040893-A1 | SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| EP-2154710-A2 | Substrate joining method and 3-D semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-02-17 | — | — | EP | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080248280-A1 | Process for Preparing a Dispersion Liquid of Zeolite Fine Particles | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-09 | — | — | US | disclosed |
| US-20080248328-A1 | Process for Preparing a Zeolite-Containing Film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-09 | — | — | US | disclosed |
| US-7405459-B2 | Semiconductor device comprising porous film | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2008-07-29 | — | — | US | disclosed |
| WO-2007106348-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) | 2007-09-20 | — | — | WO | disclosed |
| US-20070213204-A1 | Ziegler-Natta catalyst with in situ-generated donor | NOVOLEN TECHNOLOGY HOLDINGS C.V. | 2007-09-13 | — | — | US | disclosed |
| US-7244657-B2 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2007-07-17 | — | — | US | disclosed |
| US-20070108593-A1 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | OGIHARA TSUTOMU | 2007-05-17 | — | — | US | disclosed |
| US-20040091419-A1 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2004-05-13 | — | — | US | disclosed |