SCHEMBL1067718

SCHEMBL1067718

CCCOC(O[SiH3])(OCCC)OCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1616112 0.83 ADRB2 (0.38)
SCHEMBL2946093 0.81 CA1 (0.33)
SCHEMBL4188617 0.81 CA1 (0.30)
SCHEMBL661549 0.75
SCHEMBL30712217 0.73 ALDH1A1 (0.32)
SCHEMBL30712218 0.73
SCHEMBL30712215 0.73
SCHEMBL30712211 0.73 ALDH1A1 (0.32)
SCHEMBL30712209 0.73 ALDH1A1 (0.32)
SCHEMBL3194364 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108389512-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-04-15 CN disclosed
CN-108387954-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-01-18 CN disclosed
US-9663598-B2 Organosilicon compound-containing thermosetting composition and cured product thereof TOAGOSEI CO., LTD. (JP) 2017-05-30 US disclosed
EP-2154710-B1 Substrate joining method and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2016-11-16 EP disclosed
US-20160200842-A1 ORGANOSILICON COMPOUND-CONTAINING THERMOSETTING COMPOSITION AND CURED PRODUCT THEREOF TOAGOSEI CO., LTD. (JP) 2016-07-14 US disclosed
US-8829142-B2 Curable composition and process for production of organosilicon compound TOAGOSEI CO., LTD. (JP) 2014-09-09 US disclosed
EP-2270070-B1 CURABLE COMPOSITION, AND PROCESS FOR PRODUCTION OF ORGANOSILICON COMPOUND TOAGOSEI CO LTD (JP) 2014-07-30 EP disclosed
EP-2565217-B1 Curable composition and process for production of organosilicon compound TOAGOSEI CO LTD (JP) 2014-05-14 EP disclosed
US-20130149455-A1 CURABLE COMPOSITION AND PROCESS FOR PRODUCTION OF ORGANOSILICON COMPOUND TOAGOSEI CO., LTD. (JP) 2013-06-13 US disclosed
EP-2565217-A1 Curable composition and process for production of organosilicon compound TOAGOSEI CO., LTD. (JP) 2013-03-06 EP disclosed
US-20080118737-A1 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide SHIN-ETSU CHEMICAL CO. LTD. 2008-05-22 US disclosed
US-7309722-B2 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide SHIN-ETSU CHEMICAL CO. LTD. (JP) 2007-12-18 US disclosed
US-20070213204-A1 Ziegler-Natta catalyst with in situ-generated donor NOVOLEN TECHNOLOGY HOLDINGS C.V. 2007-09-13 US disclosed
US-7244657-B2 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO. LTD. (JP) 2007-07-17 US disclosed
US-7238462-B2 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2007-07-03 US disclosed
US-20070108593-A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device OGIHARA TSUTOMU 2007-05-17 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
US-20040105986-A1 excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide PANASONIC CORPORATION (JP) 2004-06-03 US disclosed
US-20040091419-A1 Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-13 US disclosed
EP-0125910-B1 PROCESS FOR PRODUCTION OF 4-METHYL-1-PENTENE POLYMER OR COPOLYMER MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) 1986-10-08 EP disclosed