SCHEMBL16248163

SCHEMBL16248163

O=C(OCCC1CCCCC1)c1cc(C(=O)OCC2CCCCC2)cc(S(=O)(=O)O)c1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
JMJD6 Q6NYC1 2/20 0.38
CHRM2 P08172 4/20 0.38
CHRM4 P08173 4/20 0.38
CHRM5 P08912 4/20 0.38
CHRM1 P11229 4/20 0.38
CHRM3 P20309 4/20 0.38
LCK P06239 1/20 0.37
FYN P06241 1/20 0.37
LMNA P02545 1/20 0.35
EGFR P00533 1/20 0.35
ACHE P22303 1/20 0.35
HTR4 Q13639 1/20 0.35
PARP15 Q460N3 1/20 0.35
PARP10 Q53GL7 1/20 0.35
ALDH1A1 P00352 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
THRB P10828 2/20 0.34
CARM1 Q86X55 1/20 0.34
PRMT6 Q96LA8 1/20 0.34
DRD2 P14416 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL178364 0.96 CHRM2 (0.40) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL10087721 0.92 LCK (0.43) JMJD6CHRM2CHRM4CHRM5CHRM1
SCHEMBL16381839 0.86 SCN9A (0.33) JMJD6CHRM2CHRM4CHRM5CHRM1
SCHEMBL16313501 0.86 TDP1 (0.38) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL16247834 0.84 L3MBTL1 (0.40) JMJD6CHRM2CHRM4CHRM5CHRM1
SCHEMBL6837846 0.84 SMN1; SMN2 (0.46) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL6391684 0.83 ALDH1A1 (0.44) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL2759903 0.83 HPGD (0.39) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL6395603 0.81 SCN9A (0.36) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL17452137 0.81 CHRM2 (0.36) CHRM2CHRM4CHRM5CHRM1CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-20160349619-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-12-01 US disclosed
US-20140342275-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-11-20 US disclosed