SCHEMBL1628201

SCHEMBL1628201

CCC(C)(C)C(=O)OC1CCC(C(=O)O)CC1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.36
PLG P00747 1/20 0.36
PLAT P00750 1/20 0.36
CHRM3 P20309 4/20 0.35
MLNR O43193 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM1 P11229 1/20 0.35
HTR2A P28223 1/20 0.35
HTR2C P28335 1/20 0.35
HRH1 P35367 1/20 0.35
OPRM1 P35372 1/20 0.35
DRD3 P35462 1/20 0.35
OPRK1 P41145 1/20 0.35
HTR2B P41595 1/20 0.35
SLC6A3 Q01959 1/20 0.35
KCNH2 Q12809 1/20 0.35
CACNA1C Q13936 1/20 0.35
KMT2A Q03164 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HMGCR P04035 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3434648 0.89 EPHX1 (0.37) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL13645133 0.85 BTK (0.32)
SCHEMBL13645199 0.84 BTK (0.31)
SCHEMBL16866389 0.83 GAA (0.41) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL2625661 0.82 CHRM3 (0.34) LMNACHRM3MLNRCHRM2CHRM1
SCHEMBL132269 0.82 CYP19A1 (0.40) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL18119952 0.82 FKBP1A (0.34) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL2625659 0.82 APOBEC3A (0.36) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL2754858 0.82 CHRM3 (0.34) CHRM3MLNRCHRM2CHRM1HTR2A
SCHEMBL3435204 0.82 EPHX1 (0.43) LMNACHRM3MLNRCHRM2CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180180996-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
US-20180181003-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-9458343-B2 Method of forming patterns FUJIFILM CORPORATION (JP) 2016-10-04 US disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9244344-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2016-01-26 US disclosed
US-20160009936-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed
US-9176386-B2 Method of forming patterns FUJIFILM CORPORATION (JP) 2015-11-03 US disclosed
US-9140981-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2015-09-22 US disclosed
US-9120288-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-01 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-7687222-B2 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7598015-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090042147-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2009-02-12 US disclosed
US-7455952-B2 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-25 US disclosed
US-20080008962-A1 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed