Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 2/20 | 0.40 |
| ▸ | CHRM3 | P20309 | 3/20 | 0.35 |
| ▸ | HMGCR | P04035 | 2/20 | 0.34 |
| ▸ | MLNR | O43193 | 1/20 | 0.34 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.34 |
| ▸ | HTR2A | P28223 | 1/20 | 0.34 |
| ▸ | HTR2C | P28335 | 1/20 | 0.34 |
| ▸ | HRH1 | P35367 | 1/20 | 0.34 |
| ▸ | OPRM1 | P35372 | 1/20 | 0.34 |
| ▸ | DRD3 | P35462 | 1/20 | 0.34 |
| ▸ | OPRK1 | P41145 | 1/20 | 0.34 |
| ▸ | HTR2B | P41595 | 1/20 | 0.34 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.34 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.34 |
| ▸ | CACNA1C | Q13936 | 1/20 | 0.34 |
| ▸ | FKBP1A | P62942 | 2/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | APOBEC3A | P31941 | 1/20 | 0.33 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3434648 | 0.92 | EPHX1 (0.37) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL131566 | 0.89 | CYP19A1 (0.42) | CYP19A1HMGCRCHRM1HTR2AOPRM1 | |
| SCHEMBL2625661 | 0.85 | CHRM3 (0.34) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL2754858 | 0.85 | CHRM3 (0.34) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL18119952 | 0.85 | FKBP1A (0.34) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL2625659 | 0.85 | APOBEC3A (0.36) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL3435204 | 0.85 | EPHX1 (0.43) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL132134 | 0.85 | EPHX1 (0.47) | CYP19A1CHRM3HMGCRMLNRCHRM2 | |
| SCHEMBL9925224 | 0.85 | TPSAB1 (0.39) | CHRM3 | |
| SCHEMBL12736995 | 0.84 | CYP19A1 (0.43) | CYP19A1CHRM3HMGCRMLNRCHRM2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 190 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11073763-B2 | Photoresist and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-07-27 | — | — | US | disclosed |
| US-20200133125-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20190346766-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-11-14 | — | — | US | disclosed |
| US-10365561-B2 | Photoresist and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-07-30 | — | — | US | disclosed |
| US-20190041749-A1 | Photoresist and Method | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-02-07 | — | — | US | disclosed |
| US-9958775-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask | FUJIFILM CORPORATION (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20080193878-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080096134-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080081289-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081292-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080076062-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-03-27 | — | — | US | disclosed |
| US-20080050675-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-02-28 | — | — | US | disclosed |
| US-20070224539-A1 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070218406-A1 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |