⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16632113 | 0.87 | — | — | |
| SCHEMBL14687440 | 0.87 | — | — | |
| SCHEMBL16241875 | 0.87 | — | — | |
| SCHEMBL566932 | 0.87 | — | — | |
| SCHEMBL996453 | 0.87 | — | — | |
| SCHEMBL149910 | 0.87 | — | — | |
| SCHEMBL15515137 | 0.87 | — | — | |
| SCHEMBL16007319 | 0.87 | — | — | |
| SCHEMBL1919131 | 0.87 | — | — | |
| SCHEMBL9637793 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 23434 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150377-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-05-28 | — | — | US | claimed |
| US-20260149428-A1 | ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER | TAIYO YUDEN CO., LTD. (JP) | 2026-05-28 | — | — | US | claimed |
| CN-122092819-A | Acoustic wave device, filter, and multiplexer | — | 2026-05-26 | — | — | CN | claimed |
| US-20260143787-A1 | CFET STRUCTURE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD (TW) | 2026-05-21 | — | — | US | claimed |
| US-20260143975-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | SK HYNIX INC (KR) | 2026-05-21 | — | — | US | claimed |
| US-12635194-B2 | Semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-05-19 | — | — | US | claimed |
| US-20260136642-A1 | Threshold Voltage Tuning Using a Multiple Dipole Loop Process for Monolithic CFET Devices | TAIWAN SEMICONDUCTOR MFG (TW) | 2026-05-14 | — | — | US | claimed |
| US-20260136655-A1 | GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURE | Electronics and telecommunications research inst (KR) | 2026-05-14 | — | — | US | claimed |
| EP-4741094-A1 | FRICTION STIR WELDING TOOL | Hufschmied Zerspanungssysteme GmbH (DE) | 2026-05-13 | — | — | EP | claimed |
| CN-224222875-U | Spiral bevel gear tooth top rounding device | 长沙斯瑞机械有限公司 | 2026-05-12 | — | — | CN | claimed |
| EP-0579756-A1 | COATED CUTTING TOOL | WARNER-LAMBERT COMPANY (US) | 1994-01-26 | — | — | EP | claimed |
| US-5252360-A | Process for the protection of an engraved roll or plate by coating an engraved surface with an interlayer and thereafter applying a wear-resistant layer to the interlayer by PVD | HUETTL WOLFGANG (DE) | 1993-10-12 | — | — | US | claimed |
| EP-0305295-B1 | METALLIZATION LAYER STRUCTURE FORMED ON ALUMINUM NITRIDE CERAMICS AND METHOD OF PRODUCING THE METALLIZATION LAYER STRUCTURE | FUJITSU LIMITED (JP) | 1993-04-21 | — | — | EP | claimed |
| WO-1992017323-A1 | COATED CUTTING TOOL | WARNER-LAMBERT COMPANY (US) | 1992-10-15 | — | — | WO | claimed |
| US-5096749-A | METHOD OF PRODUCING A METALLIZATION LAYER STRUCTURE | FUJITSU LIMITED (JP) | 1992-03-17 | — | — | US | claimed |
| US-5071693-A | Evaporation, vapor deposition | UNION CARBIDE COATINGS SERVICE TECHNOLOGY CORPORATION (US) | 1991-12-10 | — | — | US | claimed |
| EP-0418001-A1 | Multilayer coating of a nitride-containing compound and its production | Praxair S.T. Technology, Inc. (US) | 1991-03-20 | — | — | EP | claimed |
| US-4980239-A | Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure | FUJITSU LIMITED (JP) | 1990-12-25 | — | — | US | claimed |
| WO-1989002351-A1 | SHEARING COMB | WATERS GUY EDMOND (AU) | 1989-03-23 | — | — | WO | claimed |
| EP-0305295-A2 | Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure | FUJITSU LIMITED (JP) | 1989-03-01 | — | — | EP | claimed |