⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16314 | 0.87 | — | — | |
| SCHEMBL29378154 | 0.87 | — | — | |
| SCHEMBL137606 | 0.87 | — | — | |
| SCHEMBL36012 | 0.87 | — | — | |
| SCHEMBL149633 | 0.87 | — | — | |
| SCHEMBL4309424 | 0.87 | — | — | |
| SCHEMBL1002584 | 0.87 | — | — | |
| SCHEMBL30105871 | 0.87 | — | — | |
| SCHEMBL14691700 | 0.75 | — | — | |
| SCHEMBL9060380 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8236685-B2 | Phase change memory device having multiple metal silicide layers and method of manufacturing the same | HYNIX SEMICONDUCTOR INC. (KR) | 2012-08-07 | — | — | US | claimed |
| US-7750383-B2 | Semiconductor apparatus and method for manufacturing the semiconductor apparatus | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-07-06 | — | — | US | claimed |
| US-7704787-B2 | Methods for fabricating phase changeable memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-27 | — | — | US | claimed |
| US-20100065804-A1 | PHASE CHANGE MEMORY DEVICE HAVING MULTIPLE METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2010-03-18 | — | — | US | claimed |
| US-7402851-B2 | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-07-22 | — | — | US | claimed |
| US-7397092-B2 | Phase changable memory device structures | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-07-08 | — | — | US | claimed |
| US-20080073750-A1 | Semiconductor Storage Apparatus and Method for Manufacturing the Same | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-03-27 | — | — | US | claimed |
| US-20080073681-A1 | SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR APPARATUS | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-03-27 | — | — | US | claimed |
| US-20060281217-A1 | Methods For Fabricating Phase Changeable Memory Devices | SAMSUNG ELECTRONICS CO., LTD. | 2006-12-14 | — | — | US | claimed |
| US-7115927-B2 | Phase changeable memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-10-03 | — | — | US | claimed |
| US-20060148125-A1 | Phase changable memory device structures | HORII HIDEKI | 2006-07-06 | — | — | US | claimed |
| US-7037749-B2 | Methods for forming phase changeable memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-05-02 | — | — | US | claimed |
| US-20050002227-A1 | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-01-06 | — | — | US | claimed |
| US-20040251551-A1 | Phase changeable memory devices including carbon nano tubes and methods for forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-12-16 | — | — | US | claimed |
| US-20040183107-A1 | Phase changable memory device structures and related methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-09-23 | — | — | US | claimed |
| US-20040165422-A1 | Phase changeable memory devices and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-08-26 | — | — | US | claimed |
| US-20230301117-A1 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | MACRONIX INTERNATIONAL CO., LTD. (TW) | 2023-09-21 | — | — | US | disclosed |
| WO-2021231819-A1 | MICROELECTROMECHANICAL DEVICE WITH BEAM STRUCTURE OVER SILICON NITRIDE UNDERCUT | TEXAS INSTRUMENTS INCORPORATED (US) | 2021-11-18 | — | — | WO | disclosed |
| US-20040183107-A1 | Phase changable memory device structures and related methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-09-23 | — | — | US | disclosed |
| US-20040165422-A1 | Phase changeable memory devices and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-08-26 | — | — | US | disclosed |