SCHEMBL1639013

SCHEMBL1639013

CO[Si](C)(OC)O[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5246792 0.92
SCHEMBL15429245 0.89
SCHEMBL14183061 0.87
SCHEMBL18767117 0.86
SCHEMBL14194889 0.85
SCHEMBL628831 0.84
SCHEMBL1638789 0.83
SCHEMBL15678739 0.81
SCHEMBL863089 0.81
SCHEMBL7740414 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 129 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12610790-B2 Structure including a photoresist underlayer and method of forming same ASM IP HOLDING B.V. (NL) 2026-04-21 US claimed
CN-117886325-A Preparation method of silicon carbide aerogel 安徽中科恒安安全科技有限公司 2024-04-16 CN claimed
CN-110648961-B Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2023-05-23 CN claimed
US-20210013037-A1 STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME ASM IP HOLDING B.V. (NL) 2021-01-14 US claimed
CN-110648961-A Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2020-01-03 CN claimed
US-9896326-B2 FCVD line bending resolution by deposition modulation APPLIED MATERIALS, INC. (US) 2018-02-20 US claimed
US-20160181089-A1 FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION APPLIED MATERIALS, INC. (US) 2016-06-23 US claimed
US-20160017487-A1 INTEGRATED PRE-CLEAN AND DEPOSITION OF LOW-DAMAGE LAYERS APPLIED MATERIALS, INC. 2016-01-21 US claimed
US-20150167160-A1 ENABLING RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS APPLIED MATERIALS, INC. 2015-06-18 US claimed
JP-2008523165-A 2008-07-03 JP claimed
EP-1833880-A1 ULTRAVIOLET TRANSMISSIVE POLYHEDRAL SILSESQUIOXANE POLYMERS Matsushita Electric Works, Ltd. (JP) 2007-09-19 EP claimed
WO-2006062219-A1 ULTRAVIOLET TRANSMISSIVE POLYHEDRAL SILSESQUIOXANE POLYMERS MATSUSHITA ELECTRIC WORKS, LTD. (JP) 2006-06-15 WO claimed
US-20050221622-A1 Deposition method and semiconductor device SEMICONDUCTOR PROCESS LABORATORY CO., LTD. (JP) 2005-10-06 US claimed
EP-0698632-B1 Process for preparing organosiloxane terminated with silanol group SHINETSU CHEMICAL CO (JP) 2001-11-21 EP claimed
US-5576408-A Process for preparing low molecular weight organosiloxane terminated with silanol group SHIN-ETSU CHEMICAL CO., LTD. (JP) 1996-11-19 US claimed
US-12610790-B2 Structure including a photoresist underlayer and method of forming same ASM IP HOLDING B.V. (NL) 2026-04-21 US disclosed
US-20260018411-A1 REMOTE ICP RADICAL DEPOSITION OF TUNABLE LOW-K DIELECTRIC FILMS APPLIED MATERIALS INC (US) 2026-01-15 US disclosed
EP-0698632-A1 Process for preparing organosiloxane terminated with silanol group SHIN-ETSU CHEMICAL CO., LTD. (JP) 1996-02-28 EP disclosed
EP-0560617-A2 Method of manufacturing insulating film on semiconductor device and apparatus for carrying out the same KAWASAKI STEEL CORPORATION (JP) 1993-09-15 EP disclosed
EP-0520752-A1 Stabilised polymer composition and use Borealis Holding A/S (DK) 1992-12-30 EP disclosed