SCHEMBL1639014

SCHEMBL1639014

COC1(OC)CC[Si](C)(C)[Si](C)(C)O1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1639944 0.78
SCHEMBL1639257 0.78
SCHEMBL4182122 0.77
SCHEMBL5024992 0.77
SCHEMBL11315874 0.76
SCHEMBL5460542 0.68
SCHEMBL3474683 0.68
SCHEMBL18631787 0.67
SCHEMBL1059754 0.67
SCHEMBL412623 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12610790-B2 Structure including a photoresist underlayer and method of forming same ASM IP HOLDING B.V. (NL) 2026-04-21 US claimed
CN-110648961-B Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2023-05-23 CN claimed
US-20210013037-A1 STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME ASM IP HOLDING B.V. (NL) 2021-01-14 US claimed
CN-110648961-A Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2020-01-03 CN claimed
US-9896326-B2 FCVD line bending resolution by deposition modulation APPLIED MATERIALS, INC. (US) 2018-02-20 US claimed
US-20160181089-A1 FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION APPLIED MATERIALS, INC. (US) 2016-06-23 US claimed
US-20160017487-A1 INTEGRATED PRE-CLEAN AND DEPOSITION OF LOW-DAMAGE LAYERS APPLIED MATERIALS, INC. 2016-01-21 US claimed
US-20150167160-A1 ENABLING RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS APPLIED MATERIALS, INC. 2015-06-18 US claimed
US-20050221622-A1 Deposition method and semiconductor device SEMICONDUCTOR PROCESS LABORATORY CO., LTD. (JP) 2005-10-06 US claimed
US-12610790-B2 Structure including a photoresist underlayer and method of forming same ASM IP HOLDING B.V. (NL) 2026-04-21 US disclosed
US-20260018411-A1 REMOTE ICP RADICAL DEPOSITION OF TUNABLE LOW-K DIELECTRIC FILMS APPLIED MATERIALS INC (US) 2026-01-15 US disclosed
US-12322648-B2 Interlayer dielectric layer TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-06-03 US disclosed
US-20250174493-A1 INTERLAYER DIELECTRIC LAYER TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-05-29 US disclosed
CN-112640065-B Method for etching structures for semiconductor applications 应用材料公司 2024-10-01 CN disclosed
CN-1823406-A Low dielectric constant film, method for producing the same, and electronic device using the same RORZE CORP (JP) 2006-08-23 CN disclosed
US-20050221622-A1 Deposition method and semiconductor device SEMICONDUCTOR PROCESS LABORATORY CO., LTD. (JP) 2005-10-06 US disclosed
US-20050048797-A1 Method of forming thin film ASM JAPAN K.K/ (JP) 2005-03-03 US disclosed
WO-2005008762-A1 LOW-PERMITTIVITY FILM, AND PRODUCTION METHOD THEREFOR, AND ELECTRONIC COMPONENT USING IT RORZE CORPORATION (JP) 2005-01-27 WO disclosed
US-20040202956-A1 a photocurable mixture of a hydrolyzable metal (silyl) compound and a reaction, polymerization or crosslinking promoter; curing; adhesives, seals, semiconductors, dielectrics, microlenses, optical fibers, color filters, gas permeable films SEKISUI CHEMICAL CO., LTD. (JP) 2004-10-14 US disclosed
EP-1391476-A1 PHOTOREACTIVE COMPOSITION SEKISUI CHEMICAL CO., LTD. (JP) 2004-02-25 EP disclosed