SCHEMBL1663390

SCHEMBL1663390

Cl[Si](Cl)(Cl)Cl.[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20461 0.89
SCHEMBL5442827 0.89 ALDH1A1 (0.43)
SCHEMBL1415962 0.80
Water SCHEMBL6694512 0.80
Iodide SCHEMBL9276668 0.80
SCHEMBL17393533 0.80
SCHEMBL11353006 0.80
SCHEMBL1415964 0.80
Charcoal, Activated SCHEMBL6544903 0.80
SCHEMBL9500594 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101585537-B Method and device for preparing solar-grade silicon LI SHAOGUANG (CN) 2011-11-30 CN claimed
CN-101585537-A Method and device for preparing solar-grade silicon SHAOGUANG LI (CN) 2009-11-25 CN claimed
CN-121554066-A Novel polyaluminum ferric zinc silicon chloride flocculant and preparation method and application thereof 安徽工业大学 2026-02-24 CN disclosed
CN-121554066-A Novel polyaluminum ferric zinc silicon chloride flocculant and preparation method and application thereof 安徽工业大学 2026-02-24 CN disclosed
US-8658118-B2 High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same JNC CORPORATION (JP) 2014-02-25 US disclosed
US-8287645-B2 Production process for high purity polycrystal silicon and production apparatus for the same JNC CORPORATION (JP) 2012-10-16 US disclosed
CN-102616784-A Method of reducing silicon tetrachloride with zinc powder in organic solvent to prepare solar grade polysilicon Inner mongolia shenzhou silicon industry co ltd 2012-08-01 CN disclosed
CN-101585537-B Method and device for preparing solar-grade silicon LI SHAOGUANG (CN) 2011-11-30 CN disclosed
US-20110165032-A1 PRODUCTION PROCESS FOR HIGH PURITY POLYCRYSTAL SILICON AND PRODUCTION APPARATUS FOR THE SAME CHISSO CORPORATION (JP) 2011-07-07 US disclosed
US-20110158885-A1 HIGH PURITY CRYSTALLINE SILICON, HIGH PURITY SILICON TETRACHLORIDE AND PROCESSES FOR PRODUCING THE SAME CHISSO CORPORATION (JP) 2011-06-30 US disclosed
US-7922814-B2 Production process for high purity polycrystal silicon and production apparatus for the same CHISSO CORPORATION (JP) 2011-04-12 US disclosed
CN-101585537-A Method and device for preparing solar-grade silicon SHAOGUANG LI (CN) 2009-11-25 CN disclosed
US-20070123011-A1 PRODUCTION PROCESS FOR HIGH PURITY POLYCRYSTAL SILICON AND PRODUCTION APPARATUS FOR THE SAME CHISSO CORPORATION (JP) 2007-05-31 US disclosed