SCHEMBL16649235

SCHEMBL16649235

CCCCC[N+](CCCC)(CCCC)CCCCC

nearest known ligand 0.93

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ SLC22A1 O15245 3/20 0.92
▸ SLC22A2 O15244 1/20 0.92
▸ ALDH1A1 P00352 1/20 0.80
▸ TP53 P04637 1/20 0.80
▸ CYP3A4 P08684 1/20 0.80
▸ ALOX15 P16050 1/20 0.80
▸ TSHR P16473 1/20 0.80
▸ ALOX12 P18054 1/20 0.80
▸ SMN1; SMN2 Q16637 1/20 0.80
▸ HIF1A Q16665 1/20 0.80
▸ HSD17B10 Q99714 1/20 0.80
▸ DNM1 Q05193 8/20 0.71

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL766127 1.00 SLC22A1 (0.92) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL1063806 1.00 SLC22A1 (0.92) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL964558 1.00 SLC22A1 (0.92) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapentylammonium SCHEMBL9859800 1.00 SLC22A1 (0.92) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrahexylammonium SCHEMBL2521928 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL13567361 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL4059060 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL1060273 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL158607 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
SCHEMBL4059099 0.96 SLC22A1 (0.93) SLC22A1SLC22A2ALDH1A1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12252632-B2 Chemical-mechanical polishing composition, rinse composition, chemical- mechanical polishing method, and rinsing method ENTEGRIS, INC. (US) 2025-03-18 — — US claimed
US-20220372329-A1 CHEMICAL-MECHANICAL POLISHING COMPOSITION, RINSE COMPOSITION, CHEMICAL-MECHANICAL POLISHING METHOD, AND RINSING METHOD ENTEGRIS, INC. 2022-11-24 — — US claimed
EP-2863452-A1 Battery separation layer comprising a quaternary ammonium fluorinated salt coating material Samsung SDI Co., Ltd. (KR) 2015-04-22 — — EP claimed
US-12252632-B2 Chemical-mechanical polishing composition, rinse composition, chemical- mechanical polishing method, and rinsing method ENTEGRIS, INC. (US) 2025-03-18 — — US disclosed
EP-3398983-B1 POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHINETSU CHEMICAL CO (JP) 2023-09-27 — — EP disclosed
EP-4130878-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK FUJIFILM Corporation (JP) 2023-02-08 — — EP disclosed
US-20220372329-A1 CHEMICAL-MECHANICAL POLISHING COMPOSITION, RINSE COMPOSITION, CHEMICAL-MECHANICAL POLISHING METHOD, AND RINSING METHOD ENTEGRIS, INC. 2022-11-24 — — US disclosed
CN-114258421-A Chemical mechanical polishing composition, cleaning composition, chemical mechanical polishing method and cleaning method CMC材料株式会社 2022-03-29 — — CN disclosed
WO-2020156106-A1 HETEROCYCLIC ARYL FORMAMIDES OR SALT THEREOF, PREPARATION METHOD, WEEDING COMPOSITION, AND APPLICATION 青岛清原化合物有限公司 2020-08-06 — — WO disclosed
EP-2863452-A1 Battery separation layer comprising a quaternary ammonium fluorinated salt coating material Samsung SDI Co., Ltd. (KR) 2015-04-22 — — EP disclosed
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