Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 5/20 | 0.50 |
| ▸ | MEN1 | O00255 | 4/20 | 0.50 |
| ▸ | MAOA | P21397 | 3/20 | 0.46 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.46 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.46 |
| ▸ | FYN | P06241 | 1/20 | 0.46 |
| ▸ | ACHE | P22303 | 1/20 | 0.46 |
| ▸ | AHR | P35869 | 1/20 | 0.46 |
| ▸ | MAOB | P27338 | 2/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.44 |
| ▸ | HPGD | P15428 | 3/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.44 |
| ▸ | GLA | P06280 | 1/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.44 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.44 |
| ▸ | ATM | Q13315 | 1/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.43 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.43 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1667175 | 0.87 | KMT2A (0.46) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL27978268 | 0.84 | KMT2A (0.50) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL8598610 | 0.83 | KMT2A (0.57) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL6457317 | 0.83 | CYP11B1 (0.47) | KMT2AMEN1CYP1A2ALDH1A1HPGD | |
| SCHEMBL3706301 | 0.83 | KMT2A (0.49) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL1666392 | 0.82 | KMT2A (0.48) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL8599403 | 0.81 | KMT2A (0.44) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| Ethyne SCHEMBL8599405 | 0.81 | KMT2A (0.54) | KMT2AMEN1MAOACYP1A2ERBB2 | |
| SCHEMBL16241710 | 0.80 | AKR1C3 (0.46) | KMT2AMEN1MAOAMAOBALDH1A1 | |
| SCHEMBL17192495 | 0.80 | AKR1C3 (0.46) | KMT2AMEN1MAOAMAOBALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105229532-B | Resist underlayer composition, pattern forming method, and semiconductor integrated circuit device containing pattern | 第一毛织株式会社 | 2019-12-10 | — | — | CN | disclosed |
| CN-104024940-B | Monomer for hard mask composition, hard mask composition comprising the same, and method of forming pattern using the hard mask composition | 第毛织株式会社 | 2018-05-01 | — | — | CN | disclosed |
| US-20170327640-A1 | MONOMER FOR A HARDMASK COMPOSITION, HARDMASK COMPOSITION COMPRISING THE MONOMER, AND METHOD FOR FORMING A PATTERN USING THE HARDMASK COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2017-11-16 | — | — | US | disclosed |
| US-9725389-B2 | Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition | CHEIL INDUSTRIES, INC. (KR) | 2017-08-08 | — | — | US | disclosed |
| CN-103896736-B | Monomer for hard mask compositions and the hard mask compositions comprising monomer and the method that pattern is formed using hard mask compositions | 第毛织株式会社 | 2017-06-23 | — | — | CN | disclosed |
| US-9606438-B2 | Resist underlayer composition, method of forming patterns, and semiconductor integrated circuit device including the pattern | CHEIL INDUSTRIES, INC. (KR) | 2017-03-28 | — | — | US | disclosed |
| CN-103910610-B | The monomer of hard mask compositions, hard mask compositions and the method forming pattern | 第毛织株式会社 | 2016-08-24 | — | — | CN | disclosed |
| US-9284245-B2 | Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition | CHEIL INDUSTRIES, INC. (KR) | 2016-03-15 | — | — | US | disclosed |
| US-20160041470-A1 | RESIST UNDERLAYER COMPOSITION, METHOD OF FORMING PATTERNS, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERN | CHEIL INDUSTRIES INC. (KR) | 2016-02-11 | — | — | US | disclosed |
| CN-105229532-A | For the composition of resist underlying membrane, the pattern formation method of use composition and the conductor integrated circuit device comprising pattern | CHEIL IND INC | 2016-01-06 | — | — | CN | disclosed |
| CN-103896736-A | Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition | CHEIL IND INC | 2014-07-02 | — | — | CN | disclosed |
| EP-2662727-A2 | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-11-13 | — | — | EP | disclosed |
| US-8350096-B2 | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-20130004896-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION | ECHIGO MASATOSHI (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20110165516-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | ECHIGO MASATOSHI | 2011-07-07 | — | — | US | disclosed |
| CN-101088046-B | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2011-05-25 | — | — | CN | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
| CN-101088046-A | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2007-12-12 | — | — | CN | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110165516-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | XRCC6, XRCC5, KISS1R | KMT2A 103/4885MEN1 4130/4885MAOA 2125/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.