SCHEMBL1667167

SCHEMBL1667167

Cc1cc(C(C)(c2ccc(O)c(C)c2)c2ccc3ccccc3c2)ccc1O

nearest known ligand 0.71

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 10/20 0.71
ESR2 Q92731 6/20 0.71
MEN1 O00255 1/20 0.56
NPC1 O15118 1/20 0.56
HSP90AA1 P07900 1/20 0.56
RAB9A P51151 1/20 0.56
KMT2A Q03164 1/20 0.56
AR P10275 2/20 0.47
ALOX5 P09917 1/20 0.43
PTPN1 P18031 1/20 0.42
TDP1 Q9NUW8 2/20 0.41
TP53 P04637 1/20 0.41
CYP2A6 P11509 1/20 0.41
CYP1A2 P05177 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5439366 0.87 ALDH1A1 (0.53) ESR1ESR2MEN1NPC1HSP90AA1
SCHEMBL18055765 0.87 ESR1 (0.55) ESR1ESR2MEN1NPC1HSP90AA1
SCHEMBL29471727 0.84 ESR1 (0.80) ESR1ESR2MEN1KMT2AAR
SCHEMBL217305 0.84 ESR1 (0.80) ESR1ESR2MEN1KMT2AAR
SCHEMBL29465776 0.84 ESR1 (0.80) ESR1ESR2MEN1KMT2AAR
SCHEMBL835556 0.83 ESR1 (1.00) ESR1ESR2ARTDP1TP53
SCHEMBL29720626 0.83 ESR1 (1.00) ESR1ESR2ARTDP1TP53
SCHEMBL237505 0.81 ESR1 (0.64) ESR1ESR2MEN1NPC1HSP90AA1
SCHEMBL29672349 0.81 ESR1 (0.64) ESR1ESR2MEN1NPC1HSP90AA1
SCHEMBL23861510 0.81 ESR2 (0.47) ESR1ESR2MEN1NPC1HSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2662727-B1 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2019-08-14 EP disclosed
EP-2808736-B1 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2018-07-18 EP disclosed
EP-2808736-B1 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2018-07-18 EP disclosed
EP-1830228-B1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2015-08-05 EP disclosed
EP-2808736-A2 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-12-03 EP disclosed
US-8802353-B2 Compound for resist and radiation-sensitive composition specification MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-08-12 US disclosed
US-8802353-B2 Compound for resist and radiation-sensitive composition specification MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-08-12 US disclosed
US-8802353-B2 Compound for resist and radiation-sensitive composition specification MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-08-12 US disclosed
US-8586289-B2 Aromatic hydrocarbon resin and composition for forming underlayer film for lithography MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-19 US disclosed
EP-2662727-A2 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-13 EP disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed
US-20080113294-A1 Compound for Resist and Radiation-Sensitive Composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-05-15 US disclosed
US-20080113294-A1 Compound for Resist and Radiation-Sensitive Composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-05-15 US disclosed
US-20080113294-A1 Compound for Resist and Radiation-Sensitive Composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-05-15 US disclosed
EP-1830228-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2007-09-05 EP disclosed
US-20070059632-A1 Method of manufacturing a semiconductor device MITSUBISHI GAS CHEMICAL CO., INC. (JP) 2007-03-15 US disclosed
US-20070059632-A1 Method of manufacturing a semiconductor device MITSUBISHI GAS CHEMICAL CO., INC. (JP) 2007-03-15 US disclosed
US-20070059632-A1 Method of manufacturing a semiconductor device MITSUBISHI GAS CHEMICAL CO., INC. (JP) 2007-03-15 US disclosed
EP-1666970-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2006-06-07 EP disclosed