⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5608675 | 0.83 | — | — | |
| SCHEMBL28963928 | 0.77 | — | — | |
| SCHEMBL1039996 | 0.72 | — | — | |
| SCHEMBL29728275 | 0.68 | — | — | |
| Magnesium SCHEMBL29742414 | 0.58 | — | — | |
| SCHEMBL4320652 | 0.58 | — | — | |
| SCHEMBL8853909 | 0.55 | — | — | |
| SCHEMBL41660 | 0.55 | — | — | |
| SCHEMBL5944923 | 0.50 | TSHR (1.00) | — | |
| Water SCHEMBL31084762 | 0.47 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2876671-B1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL | HITACHI CHEMICAL CO LTD (JP) | 2017-11-22 | — | — | EP | disclosed |
| US-9714262-B2 | Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell | HITACHI CHEMICAL COMPANY, LTD. (JP) | 2017-07-25 | — | — | US | disclosed |
| US-20160211389-A1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOV OLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL | HITACHI CHEMICAL COMPANY, LTD. (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20150228812-A1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOLOLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL | HITACHI CHEMICAL COMPANY, LTD. (JP) | 2015-08-13 | — | — | US | disclosed |
| US-20150166582-A1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOVOLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTAIC CELL | HITACHI CHEMICAL COMPANY, LTD. a corporation | 2015-06-18 | — | — | US | disclosed |
| EP-2876670-A1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, SOLAR CELL ELEMENT, PRODUCTION METHOD FOR SOLAR CELL ELEMENT, AND SOLAR CELL | Hitachi Chemical Co., Ltd. (JP) | 2015-05-27 | — | — | EP | disclosed |
| EP-2876671-A1 | COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR PRODUCING SAID SEMICONDUCTOR SUBSTRATE, SOLAR CELL ELEMENT, AND METHOD FOR PRODUCING SAME | Hitachi Chemical Company, Ltd. (JP) | 2015-05-27 | — | — | EP | disclosed |