SCHEMBL16902836

SCHEMBL16902836

Oc1ccc(OC2CCC(Oc3ccc(O)cc3)CC2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.48
KMT2A Q03164 2/20 0.48
ESR2 Q92731 2/20 0.48
ESR1 P03372 1/20 0.48
PARP10 Q53GL7 1/20 0.47
EPHX2 P34913 4/20 0.47
FAAH O00519 1/20 0.47
AADAC P22760 1/20 0.47
HRH1 P35367 1/20 0.43
LTA4H P09960 3/20 0.41
NR1H2 P55055 1/20 0.41
BAX Q07812 1/20 0.41
ALDH1A1 P00352 2/20 0.41
TSHR P16473 1/20 0.41
FURIN P09958 2/20 0.40
KDM4E B2RXH2 1/20 0.40
NPC1 O15118 1/20 0.40
CA12 O43570 1/20 0.40
GMNN O75496 1/20 0.40
CA1 P00915 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20455794 1.00 MEN1 (0.48) MEN1KMT2AESR2ESR1PARP10
SCHEMBL1837838 0.91 PARP10 (0.53) MEN1KMT2AESR2ESR1PARP10
SCHEMBL10858201 0.91 PARP10 (0.58) MEN1KMT2AESR2ESR1PARP10
SCHEMBL25695450 0.89 ESR2 (0.52) MEN1KMT2AESR2ESR1PARP10
SCHEMBL1834840 0.89 PARP10 (0.52) MEN1KMT2AESR2ESR1PARP10
SCHEMBL1402272 0.89 PARP10 (0.52) MEN1KMT2AESR2ESR1PARP10
SCHEMBL1836444 0.89 PARP10 (0.52) MEN1KMT2AESR2ESR1PARP10
SCHEMBL14603517 0.85 LIPG (0.45) MEN1KMT2AESR2ESR1PARP10
SCHEMBL8798736 0.85 HRH1 (0.66) PARP10HRH1HRH3
SCHEMBL7873487 0.83 ESR2 (0.53) MEN1KMT2AESR2ESR1PARP10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed