SCHEMBL16902837

SCHEMBL16902837

Oc1ccc(OC2CCCCC2Oc2ccc(O)cc2)cc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPY1R P25929 1/20 0.49
NPY2R P49146 1/20 0.49
NPY4R P50391 1/20 0.49
NPY5R Q15761 1/20 0.49
KMT2A Q03164 4/20 0.44
MEN1 O00255 3/20 0.44
ESR2 Q92731 2/20 0.44
ESR1 P03372 1/20 0.44
PRKCG P05129 1/20 0.41
PRKCB P05771 1/20 0.41
PRKCA P17252 1/20 0.41
PRKCH P24723 1/20 0.41
PRKCE Q02156 1/20 0.41
PRKCD Q05655 1/20 0.41
LTA4H P09960 3/20 0.38
NR1H2 P55055 1/20 0.38
BAX Q07812 1/20 0.38
LMNA P02545 2/20 0.38
HIF1A Q16665 2/20 0.38
APP P05067 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6428868 0.91 MEN1 (0.48) NPY1RNPY2RNPY4RNPY5RKMT2A
SCHEMBL1837838 0.82 PARP10 (0.53) KMT2AMEN1ESR2ESR1LMNA
SCHEMBL1834840 0.80 PARP10 (0.52) KMT2AMEN1ESR2ESR1ALDH1A1
SCHEMBL1836444 0.80 PARP10 (0.52) KMT2AMEN1ESR2ESR1ALDH1A1
SCHEMBL1402272 0.80 PARP10 (0.52) KMT2AMEN1ESR2ESR1ALDH1A1
SCHEMBL10858201 0.77 PARP10 (0.58) KMT2AMEN1ESR2ESR1ALDH1A1
SCHEMBL20022643 0.77 NPY1R (0.73) NPY1RNPY2RNPY4RNPY5RKMT2A
SCHEMBL138579 0.77 PRKCG (0.39) NPY1RNPY2RNPY4RNPY5RKMT2A
SCHEMBL138580 0.77 PRKCG (0.39) NPY1RNPY2RNPY4RNPY5RKMT2A
SCHEMBL138578 0.77 PRKCG (0.39) NPY1RNPY2RNPY4RNPY5RKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed