Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.37 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | ESR1 | P03372 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.36 |
| ▸ | CTSG | P08311 | 1/20 | 0.36 |
| ▸ | CMA1 | P23946 | 1/20 | 0.36 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.36 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.36 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.36 |
| ▸ | RAPGEF4 | Q8WZA2 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.35 |
| ▸ | POLB | P06746 | 2/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3151887 | 0.91 | ESR1 (0.38) | ALDH1A1HSD11B1KMT2AMEN1ESR1 | |
| SCHEMBL9615639 | 0.89 | HSD11B1 (0.41) | TDP1LMNAALDH1A1HSD11B1KDM4E | |
| SCHEMBL4456490 | 0.87 | TDP1 (0.36) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL7805745 | 0.87 | TDP1 (0.36) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL2512390 | 0.86 | FFAR4 (0.36) | TDP1LMNAALDH1A1KMT2AMEN1 | |
| SCHEMBL5399285 | 0.84 | HSD11B1 (0.42) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL16034284 | 0.84 | TDP1 (0.45) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL6915057 | 0.84 | HSD11B1 (0.42) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL20658918 | 0.84 | HSD11B1 (0.42) | TDP1LMNAALDH1A1HSD11B1KMT2A | |
| SCHEMBL20533883 | 0.84 | HSD11B1 (0.42) | TDP1LMNAALDH1A1HSD11B1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1093645-C | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 2002-10-30 | — | — | CN | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| CN-1227355-A | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 1999-09-01 | — | — | CN | claimed |
| US-4108747-A | Curable compositions and method for curing such compositions | GENERAL ELECTRIC COMPANY (US) | 1978-08-22 | — | — | US | claimed |
| WO-2023002928-A1 | FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE | 株式会社ADEKA | 2023-01-26 | — | — | WO | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8343694-B2 | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-01 | — | — | US | disclosed |
| EP-1684118-B1 | Patterning process using a negative resist composition | SHINETSU CHEMICAL CO (JP) | 2012-04-18 | — | — | EP | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-7335787-B2 | Method for producing onium salt derivatives, and novel onium salt derivatives | TOYO GOSEI KOGYO CO., LTD. (JP) | 2008-02-26 | — | — | US | disclosed |
| US-7312016-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1164127-A1 | PROCESS FOR PRODUCING ONIUM SALT DERIVATIVE AND NOVEL ONIUM SALT DERIVATIVE | Toyo Gosei Kogyo Co., Ltd. (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | disclosed |
| US-6010820-A | COMPOUND CAPABLE OF GENERTING SULFONIC ACID UPON IRRADIATION | FUJI PHOTO FILM CO., LTD. (JP) | 2000-01-04 | — | — | US | disclosed |
| CN-1227355-A | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 1999-09-01 | — | — | CN | disclosed |
| US-5945250-A | CONTAINING A SULFONIUM SALT RESIN; HAVING GOOD SOLUBILITY IN SOLVENT, HIGH PHOTOSENSITIVITY, EXCELLENT RESIST PATTERN AND STABILITY | FUJI PHOTO FILM CO., LTD. (JP) | 1999-08-31 | — | — | US | disclosed |
| US-5925484-A | Black photosensitive resin composition, color filter made by using the same, and a process for the production thereof | TOPPAN PRINTING CO., LTD. (JP) | 1999-07-20 | — | — | US | disclosed |
| US-4108747-A | Curable compositions and method for curing such compositions | GENERAL ELECTRIC COMPANY (US) | 1978-08-22 | — | — | US | disclosed |