SCHEMBL17102759

SCHEMBL17102759

CCC(C)(C)N[Si](C)(C)NC(C)(C)CC

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16843975 0.84
SCHEMBL6027786 0.81 TSHR (0.33) TSHRTDP1
SCHEMBL19038497 0.77 TSHR (0.30) TSHRTDP1
SCHEMBL6027925 0.77 TSHR (0.30) TSHRTDP1
SCHEMBL6028313 0.73 TSHR (0.32) TSHRTDP1
SCHEMBL6027606 0.73 EPHX1 (0.31)
SCHEMBL6027587 0.73
SCHEMBL17600614 0.71
SCHEMBL17107824 0.71 TSHR (0.30) TSHRTDP1
SCHEMBL6027948 0.69 EPHX1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
EP-3347504-B1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MAT US LLC (US) 2024-09-25 EP claimed
CN-117904602-A Method for depositing conformal metal or metalloid silicon nitride films 弗萨姆材料美国有限责任公司 2024-04-19 CN claimed
US-20240047196-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MAT US LLC (US) 2024-02-08 US claimed
US-20240014036-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC 2024-01-11 US claimed
CN-117265512-A Method for depositing conformal metal or metalloid silicon nitride films and resulting films 弗萨姆材料美国有限责任公司 2023-12-22 CN claimed
CN-116918029-A selective thermal atomic layer deposition 弗萨姆材料美国有限责任公司 2023-10-20 CN claimed
CN-116761906-A Selective plasma enhanced atomic layer deposition 弗萨姆材料美国有限责任公司 2023-09-15 CN claimed
EP-4240886-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
EP-4241299-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
US-11732351-B2 Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films VERSUM MATERIALS US, LLC (US) 2023-08-22 US claimed
WO-2022119865-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC (US) 2022-06-09 WO claimed
WO-2022119860-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MATERIAL US, LLC (US) 2022-06-09 WO claimed
US-20210388489-A1 Methods for Depositing a Conformal Metal or Metalloid Silicon Nitride Film and Resultant Films VERSUM MATERIALS US, LLC (US) 2021-12-16 US claimed
CN-113088927-A Compositions and methods for depositing silicon oxide films 弗萨姆材料美国有限责任公司 2021-07-09 CN claimed
US-20180274097-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM VERSUM MATERIALS US, LLC 2018-09-27 US claimed
US-20180245215-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MATERIALS US, LLC 2018-08-30 US claimed
EP-3347504-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS Air Products and Chemicals, Inc. (US) 2018-07-18 EP claimed
US-20150275355-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-10-01 US claimed
EP-2924143-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-09-30 EP claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150275355-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS NR4A3, NR4A1, RTN4 TSHR 769/4885TDP1 4733/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.