SCHEMBL17138405

SCHEMBL17138405

O=C=NCCCC(N=C=O)(N=C=O)N=C=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9460678 0.91
SCHEMBL7626788 0.91
SCHEMBL230924 0.77
SCHEMBL6895569 0.77 NAAA (0.31)
SCHEMBL9345649 0.74
SCHEMBL4445932 0.73
SCHEMBL5478038 0.73 FDPS (0.32)
SCHEMBL15013671 0.73
SCHEMBL7029276 0.73
SCHEMBL20391 0.73 MIF (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115820145-B Adhesive tape with crosslinked polyurethane carrier 德莎欧洲股份公司 2025-04-22 CN disclosed
CN-115820145-A Adhesive tape with cross-linked polyurethane carrier 德莎欧洲股份公司 2023-03-21 CN disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
US-10725376-B2 Pattern-forming method JSR CORPORATION (JP) 2020-07-28 US disclosed
US-20200041898-A1 RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2020-02-06 US disclosed
US-20190094689-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2019-03-28 US disclosed
US-10209619-B2 Composition and method of forming pattern using composition JSR CORPORATION (JP) 2019-02-19 US disclosed
US-10090163-B2 Inorganic film-forming composition for multilayer resist processes, and pattern-forming method JSR CORPORATION (JP) 2018-10-02 US disclosed
US-20170362412-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
EP-3229075-A1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR Corporation (JP) 2017-10-11 EP disclosed
US-20170269476-A1 PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-09-21 US disclosed
US-20170184961-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20160349616-A1 SEMICONDUCTOR DEVICE PRODUCTION COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2016-12-01 US disclosed
US-20150364332-A1 INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-12-17 US disclosed
US-20150284539-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-10-08 US disclosed