Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.64 |
| ▸ | HBB | P68871 | 1/20 | 0.64 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.64 |
| ▸ | DHFR | P00374 | 1/20 | 0.51 |
| ▸ | C5AR1 | P21730 | 1/20 | 0.49 |
| ▸ | GSK3A | P49840 | 4/20 | 0.47 |
| ▸ | GSK3B | P49841 | 4/20 | 0.47 |
| ▸ | CCNB2 | O95067 | 1/20 | 0.44 |
| ▸ | CDK1 | P06493 | 1/20 | 0.44 |
| ▸ | CCNB1 | P14635 | 1/20 | 0.44 |
| ▸ | CCNB3 | Q8WWL7 | 1/20 | 0.44 |
| ▸ | MIF | P14174 | 1/20 | 0.44 |
| ▸ | P2RX4 | Q99571 | 1/20 | 0.43 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.43 |
| ▸ | PDE5A | O76074 | 1/20 | 0.43 |
| ▸ | PDE4A | P27815 | 1/20 | 0.43 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.43 |
| ▸ | PDE4C | Q08493 | 1/20 | 0.43 |
| ▸ | PDE4D | Q08499 | 1/20 | 0.43 |
| ▸ | ALKBH5 | Q6P6C2 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15164280 | 1.00 | TP53 (0.64) | TP53HBBSMN1; SMN2DHFRC5AR1 | |
| SCHEMBL1715940 | 0.81 | TP53 (0.62) | TP53HBBSMN1; SMN2DHFRGSK3A | |
| Teroxirone SCHEMBL4452999 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| Teroxirone SCHEMBL2097375 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| Teroxirone SCHEMBL4470513 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| SCHEMBL8985073 | 0.80 | GSK3B (0.67) | SMN1; SMN2C5AR1GSK3AGSK3BCCNB2 | |
| Teroxirone SCHEMBL2097151 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| Teroxirone SCHEMBL4472568 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| Teroxirone SCHEMBL4932 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT | |
| Teroxirone SCHEMBL4461477 | 0.80 | TP53 (1.00) | TP53HBBSMN1; SMN2DHFRMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2157614-B1 | GATE INSULATING FILM FORMING AGENT FOR THIN-FILM TRANSISTOR | NISSAN CHEMICAL IND LTD (JP) | 2017-03-01 | — | — | EP | disclosed |
| US-8710491-B2 | Forming agent for gate insulating film of thin film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8710491-B2 | Forming agent for gate insulating film of thin film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8623745-B2 | Composition for forming gate insulating film for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-01-07 | — | — | US | disclosed |
| US-8623745-B2 | Composition for forming gate insulating film for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-01-07 | — | — | US | disclosed |
| US-8436339-B2 | Gate insulating film forming agent for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-05-07 | — | — | US | disclosed |
| US-8436339-B2 | Gate insulating film forming agent for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-05-07 | — | — | US | disclosed |
| CN-101523292-B | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSAN CHEMICAL IND LTD | 2013-04-10 | — | — | CN | disclosed |
| EP-2085823-B1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | NISSAN CHEMICAL IND LTD (JP) | 2013-01-16 | — | — | EP | disclosed |
| US-20110318907-A1 | COMPOSITION FOR FORMING GATE INSULATING FILM FOR THIN-FILM TRANSISTOR | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-12-29 | — | — | US | disclosed |
| CN-101523292-A | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSAN CHEMICAL IND LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| EP-2085823-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | Nissan Chemical Industries, Ltd. (JP) | 2009-08-05 | — | — | EP | disclosed |
| US-20080268379-A1 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-7425399-B2 | Composition for forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-09-16 | — | — | US | disclosed |
| US-20080206680-A1 | Composition for forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-08-28 | — | — | US | disclosed |
| EP-1876495-A1 | COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2008-01-09 | — | — | EP | disclosed |
| US-20070100043-A1 | Adhesive composition | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-03 | — | — | US | disclosed |
| EP-1780253-A2 | Adhesive composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-05-02 | — | — | EP | disclosed |
| US-20060290429-A1 | Composition form forming anti-reflective coating for use in lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2006-12-28 | — | — | US | disclosed |
| EP-1560070-A1 | COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2005-08-03 | — | — | EP | disclosed |