SCHEMBL17189693

SCHEMBL17189693

O=C(O)C1CCC([PH](c2ccccc2)(c2ccccc2)c2ccccc2)CC1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 3/20 0.47
NPC1 O15118 2/20 0.47
AKR1C3 P42330 1/20 0.46
AKR1C1 Q04828 1/20 0.46
L3MBTL1 Q9Y468 2/20 0.40
ALDH1A1 P00352 2/20 0.40
NOTUM Q6P988 2/20 0.40
GAA P10253 2/20 0.40
MAPT P10636 2/20 0.39
NPSR1 Q6W5P4 1/20 0.39
POLB P06746 2/20 0.38
SMN1; SMN2 Q16637 2/20 0.38
LMNA P02545 1/20 0.38
HTT P42858 1/20 0.37
VCP P55072 1/20 0.36
MEN1 O00255 1/20 0.36
GFER P55789 1/20 0.36
KMT2A Q03164 1/20 0.36
KDM4E B2RXH2 1/20 0.36
CYP2C19 P33261 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Oxalic Acid SCHEMBL7627145 0.86 TAAR1 (0.35) RAB9ANPC1AKR1C3AKR1C1L3MBTL1
SCHEMBL7652892 0.83 MEN1 (0.31) MEN1KMT2A
Hydrochloric Acid SCHEMBL28126854 0.81 MAOB (0.31) LMNAMEN1KMT2A
Bromide SCHEMBL27696944 0.81 MEN1 (0.30) MEN1KMT2A
Phosphoric Acid SCHEMBL7626794 0.80 CA2 (0.38) RAB9ANPC1ALDH1A1GAASMN1; SMN2
Oxalic Acid SCHEMBL7635892 0.78 TAAR1 (0.40) RAB9ANPC1ALDH1A1POLBSMN1; SMN2
Oxalic Acid SCHEMBL7626868 0.78 LMNA (0.37) RAB9ANPC1ALDH1A1POLBSMN1; SMN2
Oxalic Acid SCHEMBL7632154 0.77 TAAR1 (0.42) RAB9ANPC1ALDH1A1POLBSMN1; SMN2
Oxalic Acid SCHEMBL7626635 0.77 TAAR1 (0.42) RAB9ANPC1ALDH1A1POLBSMN1; SMN2
Oxalic Acid SCHEMBL7630670 0.77 TAAR1 (0.42) RAB9ANPC1ALDH1A1POLBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed