SCHEMBL1719873

SCHEMBL1719873

CCC(O)CNC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18412654 1.00
SCHEMBL21040066 1.00
Water SCHEMBL1741352 0.97
SCHEMBL13492691 0.89 KDM4E (0.38)
SCHEMBL19672397 0.86 KISS1R (0.45)
SCHEMBL2246543 0.83
SCHEMBL4455933 0.79
SCHEMBL18661328 0.79
SCHEMBL18508448 0.79
SCHEMBL12807537 0.78 ALOX15 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 390 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12325844-B2 Photoresist remover VERSUM MATERIALS US, LLC (US) 2025-06-10 US claimed
CN-118223024-A Etching solution for copper thick film 松下知识产权经营株式会社 2024-06-21 CN claimed
CN-112859552-B Application of vanadium oxide corrosion inhibition fluorine-containing stripping liquid 上海新阳半导体材料股份有限公司 2024-01-05 CN claimed
CN-112859553-B Vanadium oxide corrosion inhibition fluorine-containing stripping solution 上海新阳半导体材料股份有限公司 2023-11-10 CN claimed
CN-112859554-B Preparation method of vanadium oxide corrosion inhibition fluorine-containing stripping liquid 上海新阳半导体材料股份有限公司 2023-11-10 CN claimed
CN-110361941-B Positive photoresist stripping liquid, preparation method and application thereof 上海新阳半导体材料股份有限公司 2023-02-03 CN claimed
US-20220333044-A1 Photoresist Remover VERSUM MATERIALS US, LLC (US) 2022-10-20 US claimed
EP-3037511-B1 SEMI-AQUEOUS PHOTORESIST OR SEMICONDUCTOR MANUFACTURING RESIDUE STRIPPING AND CLEANING COMPOSITION WITH IMPROVED SILICON PASSIVATION VERSUM MAT US LLC (US) 2022-07-06 EP claimed
CN-114502708-A Photoresist remover 弗萨姆材料美国有限责任公司 2022-05-13 CN claimed
CN-112859553-A Vanadium oxide corrosion-inhibition fluorine-containing stripping liquid, preparation method and application thereof 上海新阳半导体材料股份有限公司 2021-05-28 CN claimed
US-20110165811-A1 Article Formed From Electrospinning A Dispersion DOW CORNING CORPORATION (US) 2011-07-07 US claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
EP-2318575-A2 ARTICLE FORMED FROM ELECTROSPINNING A DISPERSION Dow Corning Corporation (US) 2011-05-11 EP claimed
WO-2010025381-A2 ARTICLE FORMED FROM ELECTROSPINNING A DISPERSION DOW CORNING CORPORATION (US) 2010-03-04 WO claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
EP-1117471-B1 COMPOSITION AND PROCESS FOR REMOVAL OF ACID GASES INEOS LLC (US) 2003-02-05 EP claimed
CN-1324264-A Composition and process for removal of acid gases DOW CHEMICAL CO (US) 2001-11-28 CN claimed
EP-1117471-A1 COMPOSITION AND PROCESS FOR REMOVAL OF ACID GASES THE DOW CHEMICAL COMPANY (US) 2001-07-25 EP claimed
US-6207121-B1 PURIFICATION OF FLUID STREAMS BY ABSORPTION OF ACID GAS BY AN AQUEOUS MIXTURE OF A TERTIARY-ALKANOLAMINE AND 2-HYDROXY-BUTYLAMINE OR AN N-SUBSTITUTED 2-HYDROXYBUTYLAMINE; STABILITY; REGENERATION THE DOW CHEMICAL COMPANY 2001-03-27 US claimed
WO-2000018493-A1 COMPOSITION AND PROCESS FOR REMOVAL OF ACID GASES THE DOW CHEMICAL COMPANY (US) 2000-04-06 WO claimed