SCHEMBL1720055

SCHEMBL1720055

CCNC(C)CCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15904155 1.00
SCHEMBL27545827 0.84
SCHEMBL15050022 0.80 LMNA (0.35)
SCHEMBL30850134 0.80 LMNA (0.36)
SCHEMBL10867491 0.80 LMNA (0.36)
SCHEMBL5128930 0.80
SCHEMBL19742878 0.79
SCHEMBL3951779 0.77 KDM4E (0.41)
SCHEMBL13660465 0.77
SCHEMBL159108 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12325844-B2 Photoresist remover VERSUM MATERIALS US, LLC (US) 2025-06-10 US claimed
WO-2025108836-A1 COMPOSITIONS FOR REMOVING PHOTORESIST AND ETCH RESIDUES, METHODS OF USING AND USE THEREOF MERCK PATENT GMBH (DE) 2025-05-30 WO claimed
US-20220333044-A1 Photoresist Remover VERSUM MATERIALS US, LLC (US) 2022-10-20 US claimed
EP-4038173-A1 PHOTORESIST REMOVER Versum Materials US, LLC (US) 2022-08-10 EP claimed
CN-114502708-A Photoresist remover 弗萨姆材料美国有限责任公司 2022-05-13 CN claimed
CN-112859553-A Vanadium oxide corrosion-inhibition fluorine-containing stripping liquid, preparation method and application thereof 上海新阳半导体材料股份有限公司 2021-05-28 CN claimed
CN-112859552-A Vanadium oxide corrosion-inhibition fluorine-containing stripping liquid, preparation method and application thereof 上海新阳半导体材料股份有限公司 2021-05-28 CN claimed
CN-112859554-A Vanadium oxide corrosion-inhibition fluorine-containing stripping liquid, preparation method and application thereof 上海新阳半导体材料股份有限公司 2021-05-28 CN claimed
WO-2021067147-A1 PHOTORESIST REMOVER VERSUM MATERIALS US, LLC (US) 2021-04-08 WO claimed
EP-2758507-B1 COMPOSITION FOR REMOVING SUBSTANCES FROM SUBSTRATES VERSUM MAT US LLC (US) 2020-06-03 EP claimed
US-20150219996-A1 COMPOSITION FOR REMOVING SUBSTANCES FROM SUBSTRATES DYNALOY, LLC (US) 2015-08-06 US claimed
CN-102666745-B Conductive ink composition without forming particles and method for producing same DONGJIN SEMICHEM CO LTD 2015-03-25 CN claimed
US-8987181-B2 Photoresist and post etch residue cleaning solution DYNALOY, LLC (US) 2015-03-24 US claimed
EP-2758507-A1 PROCESS AND COMPOSITION FOR REMOVING SUBSTANCES FROM SUBSTRATES Dynaloy, LLC (US) 2014-07-30 EP claimed
WO-2014081465-A1 PROCESS AND COMPOSITION FOR REMOVING SUBSTANCES FROM SUBSTRATES DYNALOY, LLC (US) 2014-05-30 WO claimed
US-20140142017-A1 Process And Composition For Removing Substances From Substrates DYNALOY, LLC (US) 2014-05-22 US claimed
CN-102666745-A Conductive ink composition without forming particles and method for producing same DONGJIN SEMICHEM CO LTD 2012-09-12 CN claimed
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed