SCHEMBL172006

SCHEMBL172006

O=COC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15294523 0.87
SCHEMBL12254936 0.79 F2R (0.30)
SCHEMBL14132806 0.75
SCHEMBL10305799 0.75
SCHEMBL13564269 0.75
SCHEMBL13266294 0.75
SCHEMBL12415001 0.75
SCHEMBL15684577 0.75
SCHEMBL22399918 0.75
SCHEMBL415325 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180181003-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
EP-2143711-B1 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same FUJIFILM CORP (JP) 2016-12-21 EP disclosed
EP-1489459-B1 Positive resist composition and method of forming pattern using the same FUJIFILM CORP (JP) 2015-10-14 EP disclosed
US-9052592-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
US-9052592-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
EP-1903394-B1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM CORP (JP) 2015-04-29 EP disclosed
EP-1780224-B1 MULTIBRANCHED POLYMERS AND PROCESS FOR PRODUCTION THEREOF NIPPON SODA CO (JP) 2015-02-18 EP disclosed
US-8895225-B2 Method of forming patterns FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20140287360-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-25 US disclosed
US-20140287360-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-25 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-7399806-B2 Synthesis of photoresist polymers SYMYX TECHNOLOGIES, INC. (US) 2008-07-15 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20070224538-A1 Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same TOKYO OHKA KOGYO CO., LTD. (JP) 2007-09-27 US disclosed
US-20070196766-A1 Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-08-23 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed
EP-1767992-A1 Positive resist composition for immersion exposure and pattern forming method using the same FUJIFILM Corporation (JP) 2007-03-28 EP disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
EP-1752479-A1 ACRYLIC STAR POLYMER NIPPON SODA CO., LTD. (JP) 2007-02-14 EP disclosed