SCHEMBL17201890

SCHEMBL17201890

CC[Ru](=C=O)(=C=O)C1=CC=CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3340330 0.76
SCHEMBL176326 0.74
SCHEMBL6552545 0.72
SCHEMBL1982957 0.71
SCHEMBL8008064 0.67
SCHEMBL14954241 0.60
SCHEMBL14954158 0.60
SCHEMBL9734546 0.57
SCHEMBL27558860 0.57
SCHEMBL1448500 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021144334-A9 RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME MERCK PATENT GMBH (DE) 2023-06-08 WO claimed
US-9735359-B2 Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2017-08-15 US claimed
US-20150311437-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-10-29 US claimed
WO-2015164215-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE MICRON TECHNOLOGY, INC. (US) 2015-10-29 WO claimed
WO-2021144334-A9 RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME MERCK PATENT GMBH (DE) 2023-06-08 WO disclosed
US-10388872-B2 Memory cell materials and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2019-08-20 US disclosed
US-20170309820-A1 MEMORY CELL MATERIALS AND SEMICONDUCTOR DEVICE STRUCTURES MICRON SEMICONDUCTOR PRODUCTS, INC. 2017-10-26 US disclosed
US-9735359-B2 Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2017-08-15 US disclosed
US-20150311437-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-10-29 US disclosed
WO-2015164215-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE MICRON TECHNOLOGY, INC. (US) 2015-10-29 WO disclosed