SCHEMBL17320296

SCHEMBL17320296

CC(C)(CCC(C)(C)OC(=O)C12CC3CC(CC(C(=O)O)(C3)C1)C2)OC(=O)C12CC3CC(CC(C(=O)O)(C3)C1)C2

nearest known ligand 0.50

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.44
NPSR1 Q6W5P4 2/20 0.44
PKM P14618 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
RBP4 P02753 1/20 0.41
CYP17A1 P05093 2/20 0.39
CYP19A1 P11511 2/20 0.39
KMT2A Q03164 3/20 0.36
SMN1; SMN2 Q16637 2/20 0.35
LMNA P02545 1/20 0.35
MEN1 O00255 2/20 0.34
MAPT P10636 1/20 0.34
GAA P10253 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5568146 0.86 ALDH1A1 (0.44) ALDH1A1NPSR1PKML3MBTL1RBP4
SCHEMBL134550 0.84 CYP17A1 (0.51) ALDH1A1NPSR1CYP17A1CYP19A1KMT2A
SCHEMBL136663 0.79 NPSR1 (0.49) ALDH1A1NPSR1CYP17A1CYP19A1KMT2A
SCHEMBL7169007 0.78 CYP17A1 (0.47) ALDH1A1NPSR1CYP17A1CYP19A1KMT2A
SCHEMBL163910 0.77 ALDH1A1 (0.51) ALDH1A1NPSR1PKML3MBTL1KMT2A
SCHEMBL13589980 0.76 L3MBTL1 (0.58) ALDH1A1NPSR1PKML3MBTL1RBP4
SCHEMBL164232 0.76 L3MBTL1 (0.58) ALDH1A1NPSR1PKML3MBTL1RBP4
SCHEMBL14493665 0.76 L3MBTL1 (0.58) ALDH1A1NPSR1PKML3MBTL1RBP4
Hydrochloric Acid SCHEMBL5859992 0.76 ALDH1A1 (0.50) ALDH1A1NPSR1PKML3MBTL1KMT2A
SCHEMBL16213976 0.75 NPSR1 (0.51) ALDH1A1NPSR1PKML3MBTL1RBP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160252818-A9 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2016-09-01 US disclosed
US-20160252818-A9 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2016-09-01 US disclosed
US-20150355550-A1 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2015-12-10 US disclosed
US-20150355550-A1 PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD JSR CORPORATION (JP) 2015-12-10 US disclosed