SCHEMBL17353591

SCHEMBL17353591

CC[Si](CC)(CC)C(C)(C)C(C)(C)[SiH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL889472 0.65 TSHR (0.33)
SCHEMBL5925246 0.60
SCHEMBL3873047 0.60
SCHEMBL32690762 0.60 ALDH1A1 (0.33)
SCHEMBL9775422 0.60 TSHR (0.33)
SCHEMBL7147605 0.58
SCHEMBL5834220 0.58 TSHR (0.33)
SCHEMBL7513141 0.56
SCHEMBL10769630 0.56
SCHEMBL105887 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9625817-B2 Photoresist with positive-resist behaviour, method for photochemical structuring thereof, method for the production of silanes and of silicic acid (hetero)poly(co)condensates with positive-resist behaviour and also silicic acid (hetero)poly(co)condensates Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) 2017-04-18 US claimed
US-20150370169-A1 PHOTORESIST WITH POSITIVE-RESIST BEHAVIOUR, METHOD FOR PHOTOCHEMICAL STRUCTURING THEREOF, METHOD FOR THE PRODUCTION OF SILANES AND OF SILICIC ACID (HETERO)POLY(CO)CONDENSATES WITH POSITIVE-RESIST BEHAVIOUR AND ALSO SILICIC ACID (HETERO)POLY(CO)CONDENSATES Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) 2015-12-24 US claimed