Zinc Ion

Zinc Ion

SCHEMBL95145

[Al+3].[In+3].[O-2].[O-2].[O-2].[O-2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL16970958 0.89
Zinc Ion SCHEMBL31374637 0.89
Zinc Ion SCHEMBL17417201 0.89
Zinc Ion SCHEMBL17758020 0.89
Zinc Ion SCHEMBL29550481 0.89
Zinc Ion SCHEMBL19272482 0.87
Zinc Ion SCHEMBL18938 0.87
Zinc Ion SCHEMBL31373853 0.87
SCHEMBL939406 0.87
Zinc Ion SCHEMBL4369621 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 4463 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115332252-B Dynamic random access memory and preparation method thereof INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN) 2026-05-26 CN claimed
US-12610583-B2 Method for manufacturing semiconductor device KIOXIA CORPORATION (JP) 2026-04-21 US claimed
US-20260096107-A1 1S1R-BASED SELF-SELECTIVE MEMORY AND MANUFACTURING METHOD THEREFOR PEKING UNIVERSITY (CN) 2026-04-02 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-12543314-B2 Semiconductor device and method of fabricating the same Fujian Jinhua Integrated Circuit Co., Ltd. (CN) 2026-02-03 US claimed
US-12389589-B2 Semiconductor device and method for manufacturing semiconductor device CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) 2025-08-12 US claimed
US-20250220928-A1 SEMICONDUCTOR DEVICE WITH POWER GATING ELEMENT SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-07-03 US claimed
EP-4580340-A1 SEMICONDUCTOR DEVICE WITH POWER GATING ELEMENT Samsung Electronics Co., Ltd (KR) 2025-07-02 EP claimed
US-20250194076-A1 SEMICONDUCTOR DEVICES SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-06-12 US claimed
EP-2190037-A2 Semiconductor light emitting device LG Innotek Co., Ltd. (KR) 2010-05-26 EP claimed
US-20100123148-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE LG INNOTEK CO., LTD. (KR) 2010-05-20 US claimed
US-20100123166-A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE LG INNOTEK CO., LTD. (KR) 2010-05-20 US claimed
US-20100123147-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) 2010-05-20 US claimed
EP-2187455-A1 Semiconductor light emitting device LG Innotek Co., Ltd. (KR) 2010-05-19 EP claimed
EP-2187454-A2 Semiconductor light-emitting device LG Innotek Co., Ltd. (KR) 2010-05-19 EP claimed
EP-2187456-A2 Semiconductor light emitting device LG Innotek Co., Ltd. (KR) 2010-05-19 EP claimed
US-20100102350-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE LG INNOTEK CO., LTD. (KR) 2010-04-29 US claimed
US-20090267098-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE LG INNOTEK CO., LTD. (KR) 2009-10-29 US claimed
US-20090261370-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) 2009-10-22 US claimed