SCHEMBL17428422

SCHEMBL17428422

C=CC[N+](C)(CC=C)CC[N+](C)(CC=C)CC=C

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 1/20 0.37
ACHE P22303 3/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13779334 0.88 BBOX1 (0.39) BBOX1ACHE
SCHEMBL361078 0.86 ACHE (0.34) BBOX1ACHE
SCHEMBL5550564 0.85 KMT2A (0.38) BBOX1ACHE
SCHEMBL1137567 0.85 TSHR (0.36) BBOX1
Bromide SCHEMBL27245942 0.85 BBOX1 (0.38) BBOX1ACHE
SCHEMBL13779370 0.85 KMT2A (0.38) BBOX1ACHE
SCHEMBL18032594 0.85 BBOX1 (0.33) BBOX1ACHE
SCHEMBL27569664 0.85 TSHR (0.36) BBOX1ACHE
SCHEMBL7156035 0.83 MEN1 (0.39) BBOX1ACHE
Bromide SCHEMBL5550573 0.83 MEN1 (0.41) BBOX1ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9939729-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-04-10 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-20170075224-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 US disclosed
US-20170075224-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-03-16 US disclosed
US-20160041465-A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-02-11 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed