SCHEMBL17433670

SCHEMBL17433670

CCC(=O)CC(=O)[O-].CCC(=O)CC(=O)[O-].CCC(=O)CC(=O)[O-].[In+3]

nearest known ligand 0.56

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.50
TDP1 Q9NUW8 2/20 0.50
FFAR3 O14843 3/20 0.41
HDAC3 O15379 2/20 0.41
HDAC1 Q13547 2/20 0.41
HDAC2 Q92769 2/20 0.41
HDAC8 Q9BY41 2/20 0.41
CA1 P00915 1/20 0.36
ALDH1A1 P00352 1/20 0.35
BBOX1 O75936 1/20 0.32
CA2 P00918 1/20 0.32
CASP1 P29466 1/20 0.32
CES2 O00748 1/20 0.32
CES1 P23141 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3802494 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
SCHEMBL125102 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
SCHEMBL22398809 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
Potassium Ion SCHEMBL14935705 0.94
SCHEMBL8225486 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
Lithium Ion SCHEMBL25252562 0.94
Zinc Ion SCHEMBL17459908 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
SCHEMBL208043 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1
SCHEMBL5143342 0.94
SCHEMBL7635410 0.94 CA4 (0.50) CA4TDP1FFAR3HDAC3HDAC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
EP-3367402-B1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2021-07-07 EP disclosed
US-10636866-B2 Capacitor, method for manufacturing same, and wireless communication device using same TORAY INDUSTRIES, INC. (JP) 2020-04-28 US disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed
US-20180277619-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES, INC. (JP) 2018-09-27 US disclosed
EP-3367402-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME Toray Industries, Inc. (JP) 2018-08-29 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed
CN-105190901-A Field effect transistor TORAY INDUSTRIES 2015-12-23 CN disclosed